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FDB13AN06A0

Fairchild Semiconductor

MOSFET

FDB13AN06A0 — N-Channel PowerTrench® MOSFET January 2014 FDB13AN06A0 N-Channel PowerTrench® MOSFET 60 V, 62 A, 13.5 m...


Fairchild Semiconductor

FDB13AN06A0

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FDB13AN06A0 — N-Channel PowerTrench® MOSFET January 2014 FDB13AN06A0 N-Channel PowerTrench® MOSFET 60 V, 62 A, 13.5 mΩ Features Applications rDS(on) = 11.5 mΩ ( Typ.) @ VGS = 10 V, ID = 62 A Motor Load Control Qg(tot) = 22 nC ( Typ.) @ VGS = 10 V DC-DC converters and Off-line UPS Low Miller Charge Distributed Power Architectures and VRMs Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82555 D D G S D2-PAK G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (TA = 25oC, VGS = 10V, RθJA = 43oC/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Cas...




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