Document
FCB110N65F — N-Channel SuperFET® II FRFET® MOSFET
August 2016
FCB110N65F
N-Channel SuperFET® II FRFET® MOSFET
650 V, 35 A, 110 mΩ
Features
• 700 V @TJ = 150°C • Typ. RDS(on) = 96 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 98 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF) • 100% Avalanche Tested
• RoHS Compliant
Applications
• Telecom/Server Power Supplies • Solar Inverters
• Computing Power Supplies
• FPD TV Power/Lighting
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. SuperFET® II FRFET® MOSFET combines a faster and more rugged intrinsic body diode performance with fast switching, aimed at achieving better reliability and efficiency especially in resonant switching applications. SuperFET® II FRFET® is very suitable for the switching power ap.