FCB290N80

FCB290N80 — N-Channel SuperFET® II MOSFET March 2015 FCB290N80 N-Channel SuperFET® II MOSFET 800 V, 17 A, 0.29  Features RDS(on) = 0.259 Typ.) Ultra Low Gate Charge (Typ. Qg = 58 nC) Low Eoss (Typ. 5.4 uJ @ 400V) Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) 100% Avalanche Tested RoHS Compliant Applications Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. AC - DC Power Supply LED Lighting D D G S D2-PAK G Absolute Maxi...