MOSFET
FDP030N06B_F102 — N-Channel PowerTrench® MOSFET
FDP030N06B_F102
N-Channel PowerTrench® MOSFET
60 V, 195 A, 3.1 mΩ
Nove...
Description
FDP030N06B_F102 — N-Channel PowerTrench® MOSFET
FDP030N06B_F102
N-Channel PowerTrench® MOSFET
60 V, 195 A, 3.1 mΩ
November 2013
Features
RDS(on) = 2.67 mΩ (Typ.) @ VGS = 10 V, ID = 100 A Low FOM RDS(on) * QG Low Reverse-Recovery Charge, Qrr = 78 nC Soft Reverse-Recovery Body Diode Enables High Efficiency in Synchronous Rectification Fast Switching Speed 100% UIL Tested RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Renewable System
D
GDS TO-220
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID
IDM EAS dv/dt
PD
TJ, TSTG TL
Parameter
Drain to Source Voltage
Gate ...
Similar Datasheet
- FDP030N06B_F102 MOSFET - Fairchild Semiconductor