MOSFET. FDP22N50N Datasheet

FDP22N50N Datasheet PDF, Equivalent


Part Number

FDP22N50N

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
PDF Download
Download FDP22N50N Datasheet PDF


FDP22N50N Datasheet
FDP22N50N
N-Channel UniFETTM II MOSFET
500 V, 22 A, 220 mΩ
Features
• RDS(on) = 185 mΩ (Typ.) @ VGS = 10 V, ID = 11 A
• Low Gate Charge (Typ. 49 nC)
• Low Crss (Typ. 24 pF)
• 100% Avalanche Tested
• Improve dv/dt Capability
• RoHS Compliant
Applications
• PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
November 2013
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP22N50N
500
±30
22
13.2
88
1000
22
31.25
10
312.5
2.5
-55 to +150
300
FDP22N50N
0.4
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
FDP22N50N Rev. C1
1
www.fairchildsemi.com

FDP22N50N Datasheet
Package Marking and Ordering Information
Part Number
FDP22N50N
Top Mark
FDP22N50N
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V,
ID = 250 μA, Referenced to 25oC
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125oC
VGS = ±30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 11 A
VDS = 20 V, ID = 11 A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 400 V, ID = 22 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250 V, ID = 22 A,
RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 22 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 22 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 4.1 mH, IAS = 22 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 22 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Min.
500
-
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
-
0.45
-
-
-
-
-
1
10
±100
V
V/oC
μA
nA
-
0.185
24.4
5.0
0.220
-
V
Ω
S
2456
351
24
49
15
19
3200
460
50
65
-
-
pF
pF
pF
nC
nC
nC
22 55 ns
50 110 ns
48 110 ns
35 80 ns
- 22 A
- 88 A
- 1.4 V
472 - ns
6.5 - μC
©2009 Fairchild Semiconductor Corporation
FDP22N50N Rev. C1
2
www.fairchildsemi.com


Features Datasheet pdf FDP22N50N — N-Channel UniFETTM II MOSF ET FDP22N50N N-Channel UniFETTM II MOS FET 500 V, 22 A, 220 mΩ Features • R DS(on) = 185 mΩ (Typ.) @ VGS = 10 V, I D = 11 A • Low Gate Charge (Typ. 49 n C) • Low Crss (Typ. 24 pF) • 100% A valanche Tested • Improve dv/dt Capab ility • RoHS Compliant Applications PDP TV • Lighting • Uninterrupti ble Power Supply • AC-DC Power Supply November 2013 Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on adv anced planar stripe and DMOS technology . This advanced MOSFET family has the s mallest on-state resistance among the p lanar MOSFET, and also provides superio r switching performance and higher aval anche energy strength. In addition, int ernal gate-source ESD diode allows UniF ET II MOSFET to withstand over 2kV HBM surge stress. This device family is sui table for switching power converter app lications such as power factor correcti on (PFC), flat panel display (FPD) TV power, ATX and electronic.
Keywords FDP22N50N, datasheet, pdf, Fairchild Semiconductor, MOSFET, DP22N50N, P22N50N, 22N50N, FDP22N50, FDP22N5, FDP22N, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)