MOSFET. FDP5N60NZ Datasheet

FDP5N60NZ Datasheet PDF, Equivalent


Part Number

FDP5N60NZ

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 11 Pages
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FDP5N60NZ Datasheet
FDP5N60NZ / FDPF5N60NZ
N-Channel UniFETTM II MOSFET
600 V, 4.5 A, 2.0 Ω
Features
• RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A
• Low Gate Charge (Typ. 10 nC)
• Low Crss (Typ. 5 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD / LED / PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
November 2013
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
GDS
TO-220
G
GDS TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Dran current limited by maximum junction temperature
Thermal Characteristics
S
FDP5N60NZ FDPF5N60NZ
600
±25
4.5 4.5*
2.7 2.7*
18 18*
175
4.5
10
20
10
100 33
0.8 0.27
-55 to +150
300
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP5N60NZ
1.25
62.5
FDPF5N60NZ
3.75
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDP5N60NZ / FDPF5N60NZ Rev. C2
1
www.fairchildsemi.com

FDP5N60NZ Datasheet
Package Marking and Ordering Information
Part Number
FDP5N60NZ
FDPF5N60NZ
Top Mark
FDP5N60NZ
FDPF5N60NZ
Package
TO-220
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to 25oC
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125oC
VGS = ±25 V, VDS = 0 V
600 -
- 0.6
--
--
--
-V
- V/oC
1
10
μA
±10 μA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 2.25 A
VDS = 20 V, ID = 2.25 A
3.0 - 5.0 V
- 1.65 2.0 Ω
- 5 -S
Dynamic Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V, ID = 4.5 A,
VGS = 10 V
(Note 4)
-
-
-
-
-
-
450 600 pF
50 65 pF
5 7.5 pF
10 13 nC
2.5 - nC
4 - nC
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 300 V, ID = 4.5 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
-
-
-
-
15 40 ns
20 50 ns
35 80 ns
20 50 ns
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 4.5 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 4.5 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 17.3 mH, IAS = 4.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 4.5 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
- - 4.5 A
- - 18 A
- - 1.4 V
- 230 - ns
- 0.9 - μC
©2011 Fairchild Semiconductor Corporation
FDP5N60NZ / FDPF5N60NZ Rev. C2
2
www.fairchildsemi.com


Features Datasheet pdf FDP5N60NZ / FDPF5N60NZ — N-Channel Uni FETTM II MOSFET FDP5N60NZ / FDPF5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4. 5 A, 2.0 Ω Features • RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A Low Gate Charge (Typ. 10 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tes ted • Improved dv/dt Capability • E SD Improved Capability • RoHS Complia nt Applications • LCD / LED / PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply November 2013 Description UniFETTM II MOSFET is Fairchild Semiconductor’s high volta ge MOSFET family based on advanced plan ar stripe and DMOS technology. This adv anced MOSFET family has the smallest on -state resistance among the planar MOSF ET, and also provides superior switchin g performance and higher avalanche ener gy strength. In addition, internal gate -source ESD diode allows UniFET II MOSF ET to withstand over 2kV HBM surge stre ss. This device family is suitable for switching power converter applications such as power factor cor.
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