FCPF7N60NT

FCPF7N60NT — N-Channel SupreMOS® MOSFET FCPF7N60NT N-Channel MOSFET 600 V, 6.8 A, 0.52 Ω Features Typ RDS(on) = 460mΩ Ultra Low Gate Charge (typ. Qg = 17.8 nC) Low Effective Output Capacitance (typ. Coss(eff.) = 91 pF) 100% Avalanche Tested RoHS Compliant Application Solar Inverter AC-DC Power Supply December 2013 Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D GDS TO-220F G MOSFET Maximum Ratings TC = 25oC unless otherwise noted. S Symbol VDSS VGSS ID IDM EAS ...