MOSFET
FCPF290N80 — N-Channel SuperFET® II MOSFET
FCPF290N80
N-Channel SuperFET® II MOSFET
800 V, 17 A, 290 m
May 2015
Fea...
Description
FCPF290N80 — N-Channel SuperFET® II MOSFET
FCPF290N80
N-Channel SuperFET® II MOSFET
800 V, 17 A, 290 m
May 2015
Features
Typ. RDS(on) = 0.245 Ultra Low Gate Charge (Typ. Qg = 58 nC) Low Eoss (Typ. 5.6 uJ @ 400 V) Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) 100% Avalanche Tested RoHS Compliant ESD Improved Capability
Applications
AC-DC Power Supply LED Lighting
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
D
GDS
TO-220F...
Similar Datasheet
- FCPF290N80 MOSFET - Fairchild Semiconductor