FCPF400N80Z

FCPF400N80Z — N-Channel SuperFET® II MOSFET August 2015 FCPF400N80Z N-Channel SuperFET® II MOSFET 800 V, 14 A, 400 mΩ Features Typ. RDS(on) = 340 mΩ Ultra Low Gate Charge (Typ. Qg = 43 nC) Low Eoss (Typ. 4.1 uJ @ 400 V) Low Effective Output Capacitance (Typ. Coss(eff.) = 138 pF) 100% Avalanche Tested RoHS Compliant ESD Improved Capability Applications AC-DC Power Supply LED Lighting Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Lapt...