FQPF2N80YDTU

FQPF218YDTU N-Channel QFET® MOSFET FQPF2N80YDTU N-Channel QFET® MOSFET 80 V, 1.5 A, Ω July 2013 Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. 1.5 A, 80 V, RDS(on)=Ω(Max.)@VGS=10 V, ID=0.75 A Low Gate Charge (Typ. 12 nC) Low Crss (Typ. 5.5 pF) 100% Avalanche Tested D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Vol...