DRAM
TOSHIBA MOS MEMORY PRODUCT
65,536 WORD X 4 BIT DYNAMIC RAM
SILICON MONOLITHIC N-CHANNEL SILICON GATE MOS
TMM41464P-12 ...
Description
TOSHIBA MOS MEMORY PRODUCT
65,536 WORD X 4 BIT DYNAMIC RAM
SILICON MONOLITHIC N-CHANNEL SILICON GATE MOS
TMM41464P-12 TMM41464P-15
DESCRIPTION
The TMM41464P is the new generation dynamic RAM organized 65,536 word by 4 bit, it is successor to the industry standard TMM4164AP.
The TMM41464P utilizes TOSHIBA's N-channel/ Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.
Multiplexed address inputs permit the TM M
FEATURES
65,536 words by 4 bit organization Fast access Time and cycle time
DEVICE TMM41464P-12
tRAC 120ns
teAe 60ns
tnc 220ns
TMM41464P-15
150ns
75ns
260ns
Single power supply of 5V± 10% with a built-in VBB generator
Low power: 385mW Operating (MAX.) (TMM41464-12)
PIN CONNECTION
VSS
1/04 CAS 1/03 AO Al
A2
A3
A7
4 1464P to be packaged in a standard 18 pin plastic DIP. This package size provides high system bit densities and is compatible with widely avai...
Similar Datasheet
- TMM41464P-12 DRAM - Toshiba
- TMM41464P-15 DRAM - Toshiba