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TMM41464P-15

Toshiba

DRAM

TOSHIBA MOS MEMORY PRODUCT 65,536 WORD X 4 BIT DYNAMIC RAM SILICON MONOLITHIC N-CHANNEL SILICON GATE MOS TMM41464P-12 ...


Toshiba

TMM41464P-15

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Description
TOSHIBA MOS MEMORY PRODUCT 65,536 WORD X 4 BIT DYNAMIC RAM SILICON MONOLITHIC N-CHANNEL SILICON GATE MOS TMM41464P-12 TMM41464P-15 DESCRIPTION The TMM41464P is the new generation dynamic RAM organized 65,536 word by 4 bit, it is successor to the industry standard TMM4164AP. The TMM41464P utilizes TOSHIBA's N-channel/ Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TM M FEATURES 65,536 words by 4 bit organization Fast access Time and cycle time DEVICE TMM41464P-12 tRAC 120ns teAe 60ns tnc 220ns TMM41464P-15 150ns 75ns 260ns Single power supply of 5V± 10% with a built-in VBB generator Low power: 385mW Operating (MAX.) (TMM41464-12) PIN CONNECTION VSS 1/04 CAS 1/03 AO Al A2 A3 A7 4 1464P to be packaged in a standard 18 pin plastic DIP. This package size provides high system bit densities and is compatible with widely avai...




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