TRANSISTOR ARRAY. M54516P Datasheet

M54516P ARRAY. Datasheet pdf. Equivalent

Part M54516P
Description 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY
Feature MITSUBISHI SEMICONDUCTOR M54516P 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY DESCRI.
Manufacture Mitsubishi
Datasheet
Download M54516P Datasheet




M54516P
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54516P
5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54516P is five-circuit Darlington transistor arrays. The cir-
cuits are made of NPN transistors. Both the semiconductor
integrated circuits perform high-current driving with ex-
tremely low input-current supply.
FEATURES
q Medium breakdown voltage (BVCEO 25V)
q High-current driving (Ic(max) = 500mA)
q Driving available with PMOS IC output
q Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION
NC 1
IN1
2
IN2
3
INPUT IN34
IN4
5
IN5
6
GND 7
14 NC
13
O1
12
O2
11 O3 OUTPUT
10
O4
9
O5
8 NC
Package type 14P4(P)
NC : No connection
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M54516P has five circuits consisting of NPN Darlington
transistors. These ICs have resistance of 20kbetween in-
put transistor bases and input pins. The output transistor
emitters are all connected to the GND pin (pin 7).
Collector current is 500mA maximum. Collector-emitter sup-
ply voltage is 25V maximum.
CIRCUIT DIAGRAM
INPUT
20K
OUTPUT
20K
2K
GND
The five circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCEO
IC
VI
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +25
500
–0.5 ~ +25
1.47
–20 ~ +75
–55 ~ +125
Unit
V
mA
V
W
°C
°C
Jan. 2000



M54516P
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54516P
5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
VO Output voltage
Collector current Duty Cycle
(Current per 1 cir- no more than 10%
IC cuit when 7 circuits
are coming on si- Duty Cycle
multaneously)
no more than 55%
IC 400mA
VIH “H” input voltage IC 200mA
VIL “L” input voltage
Limits
Unit
min typ max
0 — 25 V
0 — 400
mA
0 — 200
8—
20 V
5—
0 — 0.5 V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
Test conditions
Limits
Unit
min typ* max
V (BR) CEO Collector-emitter breakdown voltage ICEO = 100µA
25 —
—V
VI = 8V, IC = 400mA
VCE (sat) Collector-emitter saturation voltage
VI = 5V, IC = 200mA
1.15
2.2
V
— 0.9 1.4
II Input current
VI = 17V
0.3 0.8 1.8 mA
hFE DC amplification factor
VCE = 4V, IC = 400mA, Ta = 25°C
1000 4000
* : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton Turn-on time
toff Turn-off time
Test conditions
CL = 15pF (note 1)
Limits
Unit
min typ max
— 40 — ns
— 500 — ns
NOTE 1 TEST CIRCUIT
INPUT
VO
Measured device
RL
PG OUTPUT
50CL
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50
VP = 8VP-P
(2) Input-output conditions : RL = 25, VO = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
TIMING DIAGRAM
50%
INPUT
OUTPUT
50%
ton
50%
50%
toff
Jan. 2000







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