FLASH MEMORY. PN25F16 Datasheet

PN25F16 MEMORY. Datasheet pdf. Equivalent

Part PN25F16
Description 16M-BIT SERIAL FLASH MEMORY
Feature SPI NOR PN25F16 PN25F16 16M-BIT SERIAL FLASH MEMORY Datasheet Sep. 2015 NOTE: INFORMATION IN THIS.
Manufacture PARAGON
Datasheet
Download PN25F16 Datasheet



PN25F16
SPI NOR
PN25F16
PN25F16
16M-BIT SERIAL FLASH MEMORY
Datasheet
Sep. 2015
NOTE: INFORMATION IN THIS PRODUCT SPECIFICATION IS SUBJECT TO CHANGE AT ANYTIME
WITHOUT NOTICE, ALL PRODUCT SPECIFICATIONS ARE PROVIDED FOR REFERENCE ONLY.TO
ANY INTELLECTUAL, PROPERTY RIGHTS IN PARAGON TECHNOLOGY LIMITED. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED.Web: www.paragontech.cn
A 1.3



PN25F16
1. Description
SPI NOR
PN25F16
The PN25F16 is a 16M-bit (2M-byte) Serial Flash memory, with advanced write protection mechanisms. The
PN25F16 supports the standard Serial Peripheral Interface (SPI).
The PN25F16 can be programmed 1 to 256 bytes at a time, using the Page Program instruction. It is designed to
allow either single Sector/Block at a time or full chip erase operation. The PN25F16 can be configured to protect
part of the memory as the software protected mode. The device can sustain a minimum of 100K program/erase
cycles on each sector or block.
2. FEATURES
Serial Peripheral Interface(SPI)
Standard SPI: CLK, /CS, SI, SO, /WP, /HOLD
Dual SPI: CLK, /CS, IO0, IO1, /WP, /HOLD
Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
Read
Normal Read (Serial): 50MHz clock rate
Fast Read (Serial): 108MHz clock rate
Dual/Quad (Multi-I/O) Read: 108MHz clock rate
Program
Serial-input Page Program up to 256bytes
Program Suspend and Resume
Erase
Block erase (64/32 KB)
Sector erase (4 KB)
Chip erase
Erase Suspend and Resume
Software/Hardware Write Protection
3x256-Byte Security Registers with OTP Lock
Enable/Disable protection with WP Pin
Write protect all/portion of memory via software
Top or Bottom, Sector or Block selection
Single Supply Voltage
Full voltage range: 2.7~3.6V
Temperature Range
Commercial (0to +70)
Industrial (-40to +85)
Cycling Endurance/Data Retention
Typical 100k Program-Erase cycles on any sector
Typical 20-year data retention at +55
Program/Erase Speed
Page Program time: 0.7ms typical
Sector Erase time: 60ms typical
Block Erase time: 0.2/0.4s typical
Chip Erase time: 15s typical
Flexible Architecture
Sector of 4K-byte
Block of 32/64K-byte
Low Power Consumption
20mA maximum active current
5uA maximum power down current
A 1.3







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