K1603 Datasheet: 2SK1603





K1603 2SK1603 Datasheet

Part Number K1603
Description 2SK1603
Manufacture Inchange Semiconductor
Total Page 2 Pages
PDF Download Download K1603 Datasheet PDF

Features: INCHANGE Semiconductor isc N-Channel MOS FET Transistor isc Product Specificati on 2SK1603 DESCRIPTION ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source V oltage- : VDSS=900V(Min) APPLICATIONS ·Designed for high voltage, high speed power switching applications such as s witching regulators, converters, soleno id and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VAL UE UNIT VDSS VGS ID Ptot Tj Tstg Drai n-Source Voltage (VGS=0) Gate-Source Vo ltage 900 ±30 V V Drain Current-con tinuous@ TC=25℃ 2.5 A Total Dissipat ion@TC=25℃ 40 W Max. Operating Junc tion Temperature 150 ℃ Storage Tem perature Range -55~150 ℃ THERMAL CH ARACTERISTICS SYMBOL PARAMETER MAX U NIT Rth j-c Rth j-a Thermal Resistanc e,Junction to Case 3.125 ℃/W Therma l Resistance,Junction to Ambient 62.5 /W isc website:www.iscsemi.cn 1 i sc & iscsemi is registered trademark P DF pdfFactory Pro www.fineprint.cn IN CHANGE Semiconductor isc N-Channel Mosfet Transistor isc Produ.

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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1603
DESCRIPTION
·Drain Current ID= 2.5A@ TC=25
·Drain Source Voltage-
: VDSS=900V(Min)
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
900
±30
V
V
Drain Current-continuous@ TC=252.5 A
Total Dissipation@TC=25
40 W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
3.125 /W
Thermal Resistance,Junction to Ambient 62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

     






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