STW5NA90. W5NA90 Datasheet

W5NA90 STW5NA90. Datasheet pdf. Equivalent

Part W5NA90
Description STW5NA90
Feature www.DataSheet4U.com TYPE ST W5NA90 ST H5NA90F I STW5NA90 STH5NA90FI N - CHANNEL ENHANCEMENT MODE .
Manufacture STMicroelectronics
Datasheet
Download W5NA90 Datasheet




W5NA90
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TYPE
ST W5NA90
ST H5NA90F I
STW5NA90
STH5NA90FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
VDSS
900 V
900 V
RDS(on)
< 2.5
< 2.5
ID
5.3 A
3.5 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 2.1
s ± 30 V GATE-TO-SOURCE VOLTAGE
RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s GATE CHARGE MINIMISED
s REDUCED THRESHOLD VOLTAGE SPREAD
3
2
1
3
2
1
APPLICATIONS
TO-247
ISOWATT218
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
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DataShee
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Volt age (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage T emperat ure
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
January 1998
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V alu e
STW5NA90 STH5NA90FI
900
900
± 30
5.3 3.5
3.4 2.2
21.2
21.2
150 60
1.2 0.48
4000
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /o C
V
oC
oC
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W5NA90
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STW5NA90-STH5NA90FI
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THERMAL DATA
Rt hj-ca se
Rt hj- amb
Rthc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
T O-2 47
0.83
IS OW ATT 218
2.08
30
0.1
300
oC/ W
oC/ W
oC/ W
oC
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR , VDD = 50 V)
Max Valu e
5.3
520
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 100 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
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ON ()
Min.
900
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 2.5 A
Resistance
VGS = 10V ID = 2.5 A
Tc = 100oC
On St ate Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
2.25
5.3
Typ .
Typ .
3
2.1
Max.
25
250
±100
Max.
3.75
2.5
5
Unit
V
µA
µA
nA
Unit
V
A
DYNAMIC
S ymb ol
gfs ()
Ciss
Coss
Crss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 2.5 A
Min.
4
Typ .
6.4
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1350
150
40
1900
210
60
pF
pF
pF
DataShee
2/6
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