MOSFET. FQA62N25C Datasheet

FQA62N25C MOSFET. Datasheet pdf. Equivalent

Part FQA62N25C
Description MOSFET
Feature FQA62N25C — N-Channel QFET® MOSFET FQA62N25C N-Channel QFET® MOSFET 250 V, 62 A, 35 mΩ April 2014 .
Manufacture Fairchild Semiconductor
Datasheet
Download FQA62N25C Datasheet




FQA62N25C
FQA62N25C
N-Channel QFET® MOSFET
250 V, 62 A, 35 mΩ
April 2014
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
62 A, 250
ID = 31 A
V,
RDS(on)
=
35
m
(Max.)
@
VGS
=
10
V,
• Low Gate Charge (Typ. 100 nC)
• Low Crss (Typ. 63.5 pF)
• 100% Avalanche Tested
D
G
DS
TO-3PN
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
FQA62N25C
250
62
39
248
± 30
2300
62
29.8
5.5
298
2.38
-55 to +150
300
FQA62N25C
0.42
0.24
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
FQA62N25C Rev. C2
1
www.fairchildsemi.com



FQA62N25C
Package Marking and Ordering Information
Part Number
FQA62N25C
Top Mark
FQA62N25C
Package
TO-3PN
Packing Method Reel Size
Tube
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
250 --
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.28
IDSS
Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
-- --
-- --
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
-- --
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS =10 V, ID =31 A
VDS = 40 V, ID = 31 A
2.0 --
4.0
-- 0.029 0.035
-- 55
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 4830 6280
-- 945 1230
-- 63.5 83
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 125 V, ID = 62 A,
RG = 25
VDS = 200 V, ID = 62 A,
VGS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
75
395
245
335
100
25.5
39
160
800
500
680
130
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 62 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 62 A,
dIF / dt = 100 A/µs

1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 0.96 mH, IAS = 62 A, VDD = 50 V, RG = 25 , starting TJ = 25oC.
3. ISD 62 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
-- -- 62
-- -- 248
-- -- 1.5
-- 340
--
-- 4.77
--
A
A
V
ns
µC
©2004 Fairchild Semiconductor Corporation
FQA62N25C Rev. C2
2
www.fairchildsemi.com







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