FQA62N25C

FQA62N25C — N-Channel QFET® MOSFET FQA62N25C N-Channel QFET® MOSFET 250 V, 62 A, 35 mΩ April 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features 62 A, 250 ID = 31 A V, RDS(on) = 35 mΩ (Max.) @ VGS = 10 V, Low Gate Charge (Typ. 100 nC) Low Crss (Typ. 63.5 pF) 100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Sou...