MOSFET. FQA11N90C_F109 Datasheet

FQA11N90C_F109 MOSFET. Datasheet pdf. Equivalent

Part FQA11N90C_F109
Description MOSFET
Feature FQA11N90C_F109 — N-Channel QFET® MOSFET FQA11N90C_F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω .
Manufacture Fairchild Semiconductor
Datasheet
Download FQA11N90C_F109 Datasheet




FQA11N90C_F109
FQA11N90C_F109
N-Channel QFET® MOSFET
900 V, 11.0 A, 1.1 Ω
Features
• 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A
• Low Gate Charge (Typ. 60 nC)
• Low Crss (Typ. 23 pF)
• 100% Avalanche Tested
• RoHS compliant
April 2014
Description
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology
has been especially tailored to reduce on-state resistance, and
to provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and elec-
tronic lamp ballasts.
D
G
D
S
TO-3PN
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
S
FQA11N90C_F109
900
11.0
6.9
44.0
± 30
960
11.0
30
4.0
300
2.38
-55 to +150
300
FQA11N90C_F109
0.42
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
oC/W
oC/W
©2006 Fairchild Semiconductor Corporation
FQA11N90C_F109 Rev. C2
1
www.fairchildsemi.com



FQA11N90C_F109
Package Marking and Ordering Information
Part Number
FQA11N90C_F109
Top Mark
FQA11N90C
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 900 V, VGS = 0 V
VDS = 720 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 5.5 A
VDS = 50 V, ID = 5.5 A
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 450 V, ID = 11.0 A,
RG = 25 Ω
VDS = 720 V, ID = 11.0 A,
VGS = 10 V
(Note 4)
(Note 4)
900
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
1.02
--
--
--
--
--
--
10
100
100
-100
-- 5.0
0.91 1.1
9.0 --
2530
215
23
3290
280
30
60 130
130 270
130 270
85 180
60 80
13 --
25 --
V
V/°C
μA
μA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11.0 A
trr Reverse Recovery Time
VGS = 0 V, IS = 11.0 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/μs
Notes :
1. Repetitive rating : pulse width limited by maximum junction temperature.
2. L = 15 mH, IAS = 11.0 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 11.0 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
-- -- 11.0 A
-- -- 44.0 A
-- -- 1.4 V
-- 1000 --
ns
-- 17.0 --
μC
©2006 Fairchild Semiconductor Corporation
FQA11N90C_F109 Rev. C2
2
www.fairchildsemi.com







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