MOSFET. FQAF11N90C Datasheet

FQAF11N90C MOSFET. Datasheet pdf. Equivalent

Part FQAF11N90C
Description MOSFET
Feature FQAF11N90C — N-Channel QFET® MOSFET FQAF11N90C N-Channel QFET® MOSFET 900 V, 7.0 A, 1.1 Ω December.
Manufacture Fairchild Semiconductor
Datasheet
Download FQAF11N90C Datasheet




FQAF11N90C
FQAF11N90C
N-Channel QFET® MOSFET
900 V, 7.0 A, 1.1
December 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
7.0 A, 900 V, RDS(on) = 1.1 (Max.) @ VGS = 10 V,
ID = 3.5 A
• Low Gate Charge (Typ. 60 nC)
• Low Crss (Typ. 23 pF)
• 100% Avalanche Tested
D
G
D
S
TO-3PF
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
S
FQAF11N90C
900
7.0
4.4
28.0
± 30
960
7.0
12
4.0
120
0.96
-55 to +150
300
Thermal Characteristics

+θ 
+θ

Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQAF11N90C
1.04
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C

6?
6?
©2003 Fairchild Semiconductor Corporation
FQAF11N90C Rev. C1
1
www.fairchildsemi.com



FQAF11N90C
Package Marking and Ordering Information
Part Number
FQAF11N90C
Top Mark
FQAF11N90C
Package
TO-3PF
Packing Method Reel Size
Tube
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 900 V, VGS = 0 V
VDS = 720 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
900
--
--
--
--
--
--
1.0
--
--
--
--
--
--
10
100
100
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS =10 V, ID =3.5 A
VDS = 50 V, ID = 3.5 A
3.0 --
-- 0.91
--
5.0
1.1
--
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2530 3290
-- 215 280
-- 23 30
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 450 V, ID = 11.0 A,
RG = 25
-- 60 130
-- 130 270
-- 130 270
(Note 4)
--
85
180
VDS = 720 V, ID = 11.0 A,
-- 60 80
VGS = 10 V
-- 13
--
(Note 4) --
25
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.0 A
trr Reverse Recovery Time
VGS = 0 V, IS = 11.0 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
-- -- 7.0
-- -- 28.0
-- -- 1.4
-- 1000 --
-- 17.0
--
A
A
V
ns
µC
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 37 mH, IAS = 7.0 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C .
3. ISD 11.0 A, di/dt 200 A/µs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
©2003 Fairchild Semiconductor Corporation
FQAF11N90C Rev. C1
2
www.fairchildsemi.com







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