MOSFET. FDH055N15A Datasheet

FDH055N15A Datasheet PDF, Equivalent


Part Number

FDH055N15A

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 10 Pages
PDF Download
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FDH055N15A Datasheet
March 2015
FDH055N15A
N-Channel PowerTrench® MOSFET
150 V, 167 A, 5.9 mΩ
Features
• RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Sever / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
G
D
S
TO-247
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
- DC
- AC
(f > 1 Hz)
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
Drain Current
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDH055N15A
150
±20
±30
167*
118
156
668
835
6.0
429
2.86
-55 to +175
300
*Calculated continuous current based on maximum allowable junction temperature, Package limitation current is 156 A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDH055N15A
0.35
40
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDH055N15A Rev. C3
1
www.fairchildsemi.com

FDH055N15A Datasheet
Package Marking and Ordering Information
Part Number
FDH055N15A
Top Mark
FDH055N15A
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to 25oC
VDS = 120 V, VGS = 0 V
VDS = 120 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 120 A
VDS = 10 V, ID = 120 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgs2
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance(G-S)
VDS = 75 V, VGS = 0 V,
f = 1 MHz
VDS = 75 V, VGS = 0 V
VDS = 75 V, ID = 120 A,
VGS = 10 V
f = 1 MHz
(Note 4)
Min.
150
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.1
-
-
-
-
4.8
219
7100
664
23
1159
92
31
15
16
1.2
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 75 V, ID = 120 A,
VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 120 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 120 A, VDS = 75 V,
dIF/dt = 100 A/μs
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 30 A, VDS = 75 V,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. Starting TJ = 25°C, L = 3 mH, IAS = 23.6 A.
3. ISD 120 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
-
-
-
-
-
35
67
71
21
-
-
-
105
342
348
Quantity
30 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
4.0 V
5.9 mΩ
-S
9445
885
35
-
-
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
nC
Ω
80 ns
144 ns
152 ns
52 ns
167*
668
1.25
-
-
-
A
A
V
ns
nC
nC
©2011 Fairchild Semiconductor Corporation
FDH055N15A Rev. C3
2
www.fairchildsemi.com


Features Datasheet pdf FDH055N15A — N-Channel PowerTrench® M OSFET March 2015 FDH055N15A N-Channel PowerTrench® MOSFET 150 V, 167 A, 5.9 mΩ Features • RDS(on) = 4.8 mΩ (T yp.) @ VGS = 10 V, ID = 120 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power a nd Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semi conductor’s advanced PowerTrench® pr ocess that has been tailored to minimiz e the on-state resistance while maintai ning superior switching performance. Ap plications • Synchronous Rectificatio n for ATX / Sever / Telecom PSU • Bat tery Protection Circuit • Motor Drive s and Uninterruptible Power Supplies Micro Solar Inverter G D S TO-247 Absolute Maximum Ratings TC = 25oC unle ss otherwise noted. Symbol VDSS VGSS I D IDM EAS dv/dt PD TJ, TSTG TL Paramet er Drain to Source Voltage Gate to So urce Voltage - DC - AC (f > 1 Hz) Drain Current - Continuou.
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