MOSFET. FCH043N60 Datasheet

FCH043N60 MOSFET. Datasheet pdf. Equivalent

Part FCH043N60
Description MOSFET
Feature FCH043N60 — N-Channel SuperFET® II MOSFET April 2014 FCH043N60 N-Channel SuperFET® II MOSFET 600 V.
Manufacture Fairchild Semiconductor
Datasheet
Download FCH043N60 Datasheet




FCH043N60
April 2014
FCH043N60
N-Channel SuperFET® II MOSFET
600 V, 75 A, 43 mΩ
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 37 mΩ
• Ultra Low Gate Charge (Typ. Qg = 163 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 730 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Telecom / Sever Power Supplies
• Industrial Power Supplies
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This advanced technology
is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFET II MOSFET
is suitable for various AC/DC power conversion for system
miniaturization and higher efficiency.
D
G
D
S
TO-247
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
S
FCH043N60
600
±20
±30
75
47.5
225
2025
15
5.92
100
20
592
4.74
-55 to +150
300
FCH043N60
0.21
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2014 Fairchild Semiconductor Corporation
FCH043N60 Rev. C0
1
www.fairchildsemi.com



FCH043N60
Package Marking and Ordering Information
Part Number
FCH043N60
Top Mark
FCH043N60
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
ID = 10 mA, VGS = 0 V, TC = 25oC
ID = 10 mA, VGS = 0 V, TC = 150oC
ID = 10 mA, Referenced to 25oC
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 38 A
VDS = 20 V, ID = 38 A
Dynamic Characteristics
Ciss
Coss
Crss
Cosseff.
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 400 V, VGS = 0 V,
f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 380 V, ID = 38 A,
VGS = 10 V
(Note 4)
f = 1 MHz
Min.
600
650
-
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380 V, ID = 38 A,
VGS = 10 V, RG = 4.7 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 38 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 38 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 15 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD 38 A, di/dt 200 A/μs, VDD 380V, starting TJ = 25°C.
4. Essentially independent of operating temperature.
(Note 4)
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
-
-
0.67
-
4.5
-
-
-
-
1
-
±100
V
V/oC
μA
nA
- 3.5 V
37 43 mΩ
73 -
S
9194
353
11
730
163
35
39
1.1
12225
470
16
-
215
-
-
-
pF
pF
pF
pF
nC
nC
nC
Ω
46 102
36 82
162 334
6-
ns
ns
ns
ns
- 75
- 225
- 1.2
605 -
16 -
A
A
V
ns
μC
©2014 Fairchild Semiconductor Corporation
FCH043N60 Rev. C0
2
www.fairchildsemi.com







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