MOSFET. FCH041N65F Datasheet

FCH041N65F MOSFET. Datasheet pdf. Equivalent

Part FCH041N65F
Description MOSFET
Feature FCH041N65F — N-Channel SuperFET® II FRFET® MOSFET December 2014 FCH041N65F N-Channel SuperFET® II .
Manufacture Fairchild Semiconductor
Datasheet
Download FCH041N65F Datasheet




FCH041N65F
December 2014
FCH041N65F
N-Channel SuperFET® II FRFET® MOSFET
650 V, 76 A, 41 mΩ
Features
• 700 V @ TJ = 150°C
• Typ. RDS(on) = 36 mΩ
• Ultra Low Gate Charge (Typ. Qg = 226 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 1278 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD / LED / PDP TV • Telecom / Server Power Supplies
• Solar Inverter
• AC - DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications. SuperFET
II FRFET® MOSFET’s optimized body diode reverse recovery
performance can remove additional component and improve
system reliability.
D
G
G DS
TO-247
long leads
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCH041N65F Rev. C2
1
S
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FCH041N65F_F155
650
±20
±30
76
48.1
228
2025
15
5.95
100
50
595
4.76
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCH041N65F_F155
0.21
40
Unit
oC/W
www.fairchildsemi.com



FCH041N65F
Package Marking and Ordering Information
Part Number
FCH041N65F_F155
Top Mark
FCH041N65F
Package Packing Method
TO-247 G03
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
VGS = 0 V, ID = 10 mA, TJ = 25°C
VGS = 0 V, ID = 10 mA, TJ = 150°C
ID = 10 mA, Referenced to 25oC
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 7.6 mA
VGS = 10 V, ID = 38 A
VDS = 20 V, ID = 38 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
VDS = 380 V, ID = 38 A,
VGS = 10 V
(Note 4)
f = 1 MHz
Min.
650
700
-
-
-
-
3
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
0.72
-
232
-
-
36
18
9790
355
32
192
1278
226
50
90
0.6
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380 V, ID = 38 A,
VGS = 10 V, Rg = 4.7 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 38 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 38 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 15 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD 38 A, di/dt 200 A/μs, VDD 380 V, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
(Note 4)
-
-
-
-
-
-
-
-
-
60
47
190
6.5
-
-
-
213
1.3
Quantity
30 units
Max. Unit
-
-
-
10
-
±100
V
V/oC
μA
nA
5V
41 mΩ
-S
13020
470
-
-
-
294
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
130 ns
104 ns
390 ns
23 ns
76 A
228 A
1.2 V
- ns
- μC
©2014 Fairchild Semiconductor Corporation
FCH041N65F Rev. C2
2
www.fairchildsemi.com







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