MOSFET. FCH170N60 Datasheet

FCH170N60 MOSFET. Datasheet pdf. Equivalent

Part FCH170N60
Description MOSFET
Feature FCH170N60 — N-Channel SuperFET® II MOSFET FCH170N60 N-Channel SuperFET® II MOSFET 600 V, 22 A, 170 .
Manufacture Fairchild Semiconductor
Datasheet
Download FCH170N60 Datasheet



FCH170N60
FCH170N60
N-Channel SuperFET® II MOSFET
600 V, 22 A, 170 m
July 2014
Features
• 650 V @TJ = 150°C
• Typ. RDS(on) = 150 m
• Ultra Low Gate Charge (Typ. Qg = 42 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 190 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Telecom / Sever Power Supplies
• Industrial Power Supplies
• AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This advanced technology
is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFET II MOSFET
is suitable for various AC/DC power conversion for system
miniaturization and higher efficiency.
D
G
D
S
TO-247
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCH170N60 Rev. C2
1
 (Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FCH170N60
600
±20
±30
22
14
66
525
5
2.27
100
20
227
1.82
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCH170N60
0.55
40
Unit
oC/W
www.fairchildsemi.com



FCH170N60
Package Marking and Ordering Information
Device Marking
FCH170N60
Device
FCH170N60
Package
TO-247
Reel Size
-
Tape Width
-
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
ID = 10 mA,VGS = 0 V,TJ = 25C
ID = 10 mA,VGS = 0 V, TJ = 150C
ID = 10 mA, Referenced to 25oC
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V,TC = 125oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 A
VGS = 10 V, ID = 11 A
VDS = 20 V, ID = 11 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss (eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 380 V, VGS = 0 V
f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 380 V, ID = 11 A,
VGS = 10 V
(Note 4)
f = 1 MHz
Min.
600
650
-
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
0.67
-
1.2
-
-
150
17
2150
60
2.65
190
42
9
11
0.95
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380 V, ID = 11 A,
VGS = 10 V, Rg = 4.7
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 11 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 11 A,
dIF/dt = 100 A/s
(Note 4)
-
-
-
-
-
-
-
-
-
21
12
55
3.8
-
-
-
346
6.2
Quantity
30
Max. Unit
-
-
-
1
-
±100
V
V
V/oC
A
nA
3.5 V
170 m
-S
2860
80
-
-
55
-
-
-
pF
pF
pF
pF
nC
nC
nC
50 ns
35 ns
120 ns
18 ns
22 A
66 A
1.2 V
- ns
- C
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature
2. IAS = 5 A, RG = 25 , Starting TJ = 25C
3. ISD 11 A, di/dt 200 A/s, VDD 380 V, Starting TJ = 25C
4. Essentially independent of operating temperature typical characteristics
©2014 Fairchild Semiconductor Corporation
FCH170N60 Rev. C2
2
www.fairchildsemi.com







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