MOSFET. FCH077N65F_F085 Datasheet

FCH077N65F_F085 MOSFET. Datasheet pdf. Equivalent

Part FCH077N65F_F085
Description MOSFET
Feature FCH077N65F_F085 N-Channel SuperFET II FRFET MOSFET FCH077N65F_F085 December 2014 N-Channel SuperF.
Manufacture Fairchild Semiconductor
Datasheet
Download FCH077N65F_F085 Datasheet




FCH077N65F_F085
FCH077N65F_F085
December
2014
N-Channel SuperFET II FRFET MOSFET
650 V, 54 A, 77 mΩ
Features
„ Typical RDS(on) = 68 mΩ at VGS = 10 V, ID = 27 A
„ Typical Qg(tot) = 126 nC at VGS = 10V, ID = 27 A
„ UIS Capability
„ Qualified to AEC Q101
„ RoHS Compliant
Description
G
D
S
D
G
TO-247
S
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy.
Consequently SuperFETII is very well suited for the Soft switching
and Hard Switching topologies like High Voltage Full Bridge and
Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV
automotive.
SuperFET II FRFET® MOSFET’s optimized body diode reverse
recovery performance can remove additional component and
improve system reliability.
For current package drawing, please refer to the Fairchild web
site  at  https://www.fairchildsemi.com/packagedrawings/TO/
TO247A03.pdf
Application
„ Automotive On Board Charger
„ Automotive DC/DC converter for HEV
Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS
dv/dt
Single Pulse Avalanche Rating
MOSFET dv/dt
Peak Diode Recovery dv/dt
(Note 2)
(Note 3)
PD
Power Dissipation
Derate Above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
(Note 4)
Ratings
650
±20
54
See Fig 4
1128
100
50
481
3.85
-55 to + 150
0.26
40
Units
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCH077N65F FCH077N65F_F085
TO-247
-
-
30
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 18.65mH, IAS = 11A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche.
3: ISD 27A, di/dt 200 A/us, VDD 380V, starting TJ = 25°C.
4: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface
presented here is
of the
based
drain pins. RθJC is
on mounting on a 1
guaranteed by design,
in2 pad of 2oz copper.
while
RθJAis
determined
by
the
board
design.
The maximum rating
©2014 Fairchild Semiconductor Corporation
FCH077N65F_F085 Rev. B1
1
www.fairchildsemi.com



FCH077N65F_F085
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage
IDSS Drain to Source Leakage Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS=650V, TJ = 25oC
VGS = 0V
TJ = 150oC(Note 5)
VGS = ±20V
650
-
-
-
- -V
- 10 μA
- 1 mA
- ±100 nA
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
3.0 - 5.0 V
ID = 27A,
TJ = 25oC
- 68 77 mΩ
VGS = 10V TJ = 150oC(Note 5)
-
154 184 mΩ
Ciss
Coss
Crss
Coss(eff)
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Gate Resistance
Total Gate Charge
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VDS = 0V to 520V, VGS = 0V
f = 1MHz
VDD = 380V
ID = 27A
VGS = 10V
- 5385 7162 pF
- 5629 7486 pF
- 194 - pF
- 693 - pF
- 0.5 - Ω
-
126 164
nC
- 9 12 nC
- 28 - nC
- 53 - nC
Switching Characteristics
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VDD = 380V, ID = 27A,
VGS = 10V, RG = 4.7Ω
- 64 148 ns
- 37 - ns
- 27 - ns
- 105 -
ns
- 5.3 - ns
- 108.3 237 ns
VSD Source to Drain Diode Voltage
Trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD = 27A, VGS = 0V
IF = 27A, dISD/dt = 100A/μs
VDD = 520V
--
- 190
- 1.5
Notes:
5: The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production.
1.2
-
-
V
ns
μC
FCH077N65F_F085 Rev. B1
2
www.fairchildsemi.com







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