MOSFET. FQH8N100C Datasheet

FQH8N100C MOSFET. Datasheet pdf. Equivalent

Part FQH8N100C
Description MOSFET
Feature FQH8N100C — N-Channel QFET® MOSFET FQH8N100C N-Channel QFET® MOSFET 1000 V, 8.0 A, 1.45 Ω Descripti.
Manufacture Fairchild Semiconductor
Datasheet
Download FQH8N100C Datasheet



FQH8N100C
FQH8N100C
N-Channel QFET® MOSFET
1000 V, 8.0 A, 1.45 Ω
Description
This N-Channel enhancement mode power MOSFET is produced
using Fairchild Semiconductor’s proprietary planar stripe and
DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
December 2013
Features
8 A, 1000 V, RDS(on) = 1.45 (Max.) @ VGS = 10 V
• Low Gate Charge (Typ. 53 nC)
• Low Crss (Typ. 16 pF)
Fast Switching
• 100% Avalanche Tested
Improved dv/dt Capability
RoHS Compliant
D
G
D
S
TO-247
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8 from Case for 5 Seconds.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
©2008 Fairchild Semiconductor Corporation
FQH8N100C Rev C0
1
S
FQH8N100C
1000
8.0
5.0
32
± 30
850
8.0
22
4.0
225
1.79
-55 to +150
300
FQH8N100C
0.56
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
oC/W
www.fairchildsemi.com



FQH8N100C
Package Marking and Ordering Information
Part Number
FQH8N100C
Top Mark
FQH8N100C
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 1000 V, VGS = 0 V
VDS = 800 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4.0A
VDS = 50 V, ID = 4.0 A
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 500 V, ID = 8.0A,
RG = 25
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
(Note 4)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 800 V, ID = 8.0A,
VGS = 10 V
(Note 4)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 8.0 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 8.0 A,
dIF / dt = 100 A/µs
1000
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
1.4
--
--
--
--
--
1.2
8.0
2475
195
16
50
95
122
80
53
13
23
--
--
--
620
5.2
Max.
--
--
10
100
100
-100
5.0
1.45
--
3220
255
21
110
200
254
170
70
--
--
8.0
32.0
1.4
--
--
Unit
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 25 mH, IAS = 8.0 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 8.0 A, di/dt 200 A/µs, VDD BVDSS, Starting TJ = 25°C.
4. Essentially independent of operating temperature.
©2008 Fairchild Semiconductor Corporation
FQH8N100C Rev C0
2
www.fairchildsemi.com







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