FQH35N40

FQH35N40 400V N-Channel MOSFET FQH35N40 400V N-Channel MOSFET Features 35A, 400V, RDS(on) = 0.105Ω @VGS = 10 V Low gate charge ( typical 110 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability July 2005 QFET® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. GD S TO-247 FQH Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Ga...