MOSFET. FQH35N40 Datasheet

FQH35N40 MOSFET. Datasheet pdf. Equivalent

Part FQH35N40
Description MOSFET
Feature FQH35N40 400V N-Channel MOSFET FQH35N40 400V N-Channel MOSFET Features • 35A, 400V, RDS(on) = 0.105.
Manufacture Fairchild Semiconductor
Datasheet
Download FQH35N40 Datasheet



FQH35N40
FQH35N40
400V N-Channel MOSFET
Features
• 35A, 400V, RDS(on) = 0.105@VGS = 10 V
• Low gate charge ( typical 110 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
July 2005
QFET®
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switch mode power supply, electronic lamp ballast based
on half bridge.
GD S
TO-247
FQH Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
{
z

G{
z
z
{
S
FQH35N40
400
35
22
140
±30
1600
35
31
4.5
310
2.5
-55 to +150
300
Min.
--
0.24
--
Max.
0.4
--
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FQH35N40 Rev. A
1
www.fairchildsemi.com



FQH35N40
Package Marking and Ordering Information
Device Marking
FQH35N40
Device
FQH35N40
Package
TO-247
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250µA
ID = 250µA, Referenced to 25°C
VDS = 400V, VGS = 0V
VDS = 320V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
400
--
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 17.5A
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 50V, ID = 17.5A
(Note 4)
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 200V, ID = 35A
RG = 25
VDS = 320V, ID = 35A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 35A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 35A
dIF/dt =100A/µs
(Note 4)
--
--
--
--
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 2.3mH, IAS = 35A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 35A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Typ.
--
0.42
--
--
--
--
--
0.08
35
4300
730
65
95
360
220
190
110
27
53
--
--
--
390
4.5
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
5.0
0.105
--
V
S
5600
950
85
pF
pF
pF
200 ns
730 ns
450 ns
390 ns
140 nC
-- nC
-- nC
35 A
140 A
1.5 V
-- ns
-- µC
FQH35N40 Rev. A
2 www.fairchildsemi.com







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