FQH44N10_F133
FQH44N10_F133
100V N-Channel MOSFET
Octorber 2008
QFET ®
General Description
These N-Channel enhancemen...
FQH44N10_F133
FQH44N10_F133
100V N-Channel MOSFET
Octorber 2008
QFET ®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Features
48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
D
G
GD S
TO-247
FQH Series
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-S...