MOSFET. FQH90N10V2 Datasheet

FQH90N10V2 MOSFET. Datasheet pdf. Equivalent

Part FQH90N10V2
Description MOSFET
Feature FQH90N10V2 100V N-Channel MOSFET FQH90N10V2 100V N-Channel MOSFET Features • 105A, 100V, RDS(on) = .
Manufacture Fairchild Semiconductor
Datasheet
Download FQH90N10V2 Datasheet




FQH90N10V2
FQH90N10V2
100V N-Channel MOSFET
Features
• 105A, 100V, RDS(on) = 10m@VGS = 10 V
• Low gate charge ( typical 147 nC)
• Low Crss ( typical 300 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
October 2005
QFET ®
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for DC to DC
converters, sychronous rectification, and other applications low-
est Rds(on) is required.
D
GD S
TO-247
FQH Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G
S
FQH90N10V2
100
105
78
420
±30
2430
105
33
4.5
330
2.2
-55 to +175
300
Min.
--
0.24
--
Max.
0.45
--
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FQH90N10V2 Rev. A
1
www.fairchildsemi.com



FQH90N10V2
Package Marking and Ordering Information
Device Marking
HV290N10
Device
FQH90N10V2
Package
TO-247
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250µA
ID = 250µA, Referenced to 25°C
VDS = 100V, VGS = 0V
VDS = 80V, TC = 150°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
100
--
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 52.5A
2.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 52.5A
(Note 4)
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 100V, ID = 90A
RG = 25
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 80V, ID = 90A
VGS = 10V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 105A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 90A
dIF/dt =100A/µs
(Note 4)
--
--
--
--
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.22mH, IAS = 105A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 105A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Typ.
--
0.1
--
--
--
--
--
8.5
72
4730
1180
300
52
492
304
355
147
28
60
--
--
--
114
0.54
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0 V
10 m
-- S
6150
1530
390
pF
pF
pF
114 ns
994 ns
618 ns
720 ns
191 nC
-- nC
-- nC
105 A
420 A
1.4 V
-- ns
-- µC
FQH90N10V2 Rev. A
2
www.fairchildsemi.com







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)