IGBT. FGY75N60SMD Datasheet

FGY75N60SMD IGBT. Datasheet pdf. Equivalent

Part FGY75N60SMD
Description IGBT
Feature FGY75N60SMD — 600 V, 75 A Field Stop IGBT FGY75N60SMD 600 V, 75 A Field Stop IGBT Features • High C.
Manufacture Fairchild Semiconductor
Datasheet
Download FGY75N60SMD Datasheet




FGY75N60SMD
FGY75N60SMD
600 V, 75 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 A
• High Input Impedance
• Fast Switching : EOFF = 10 uJ/A
• RoHS Compliant
June 2014
General Description
Using novel field stop IGBT technology, Fairchild’s new series
of field stop 2nd generation IGBTs offer the optimum perfor-
mance for solar inverter, UPS, welder and PFC applications
where low conduction and switching losses are essential.
Application
• Solar Inverter, UPS, Welder, SMPS, PFC
G
C
E
Power TO247
(TO-247D03)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature.
C
G
E
Ratings
600
± 20
± 30
150
75
225
75
50
225
750
375
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
©2010 Fairchild Semiconductor Corporation
FGY75N60SMD Rev. C2
1
www.fairchildsemi.com



FGY75N60SMD
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
-
-
-
Max.
0.2
0.48
40
Package Marking and Ordering Information
Part Number
FGY75N60SMD
Top Mark Package Packing Method Reel Size Tape Width
FGY75N60SMD TO-247D03
Tube
N/A N/A
Unit
oC/W
oC/W
oC/W
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
ΔBVCES
ΔTJ
ICES
IGES
Collector to Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 μA
VGE = 0 V, IC = 250 μA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250 μA, VCE = VGE
IC = 75 A, VGE = 15 V
ITCC==7157A5,oVCGE = 15 V,
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
VCC = 400 V, IC = 75 A,
IRnGdu=ct3ivΩe,LVoGaEd,=T1C5=V2, 5oC
VCC = 400 V, IC = 75 A,
IRnGdu=ct3ivΩe,LVoGaEd,=T1C5=V1, 75oC
600 - - V
- 0.67 - V/oC
- - 250 μA
-
-
±400
nA
3.5 5.0 6.5
- 1.90 2.50
- 2.14 -
V
V
V
- 3800 -
- 390 -
- 105 -
pF
pF
pF
-
24 32
ns
-
56 73
ns
-
136 177
ns
-
22 29
ns
-
2.3 2.99
mJ
-
0.77 1.00
mJ
-
3.07 3.99
mJ
- 23 - ns
- 53 - ns
- 146 -
ns
- 15 - ns
- 3.60 -
mJ
- 1.11 -
mJ
- 4.71 -
mJ
©2010 Fairchild Semiconductor Corporation
FGY75N60SMD Rev. C2
2
www.fairchildsemi.com







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