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FGY75N60SMD Dataheets PDF



Part Number FGY75N60SMD
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description IGBT
Datasheet FGY75N60SMD DatasheetFGY75N60SMD Datasheet (PDF)

FGY75N60SMD — 600 V, 75 A Field Stop IGBT FGY75N60SMD 600 V, 75 A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 A • High Input Impedance • Fast Switching : EOFF = 10 uJ/A • RoHS Compliant June 2014 General Description Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses.

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FGY75N60SMD — 600 V, 75 A Field Stop IGBT FGY75N60SMD 600 V, 75 A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 A • High Input Impedance • Fast Switching : EOFF = 10 uJ/A • RoHS Compliant June 2014 General Description Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Application • Solar Inverter, UPS, Welder, SMPS, PFC G C E Power TO247 (TO-247D03) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage Collector Current Collector Current @ TC = 25oC @ TC = 100oC Pulsed Collector Current Diode Forward Current Diode Forward Current @ TC = 25oC @ TC = 25oC @ TC = 100oC Pulsed Diode Maximum Forward.


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