IGBT. FGH30T65UPDT Datasheet

FGH30T65UPDT IGBT. Datasheet pdf. Equivalent

Part FGH30T65UPDT
Description IGBT
Feature FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT November 2013 FGH30T65UPDT 650V, 30A Field Stop .
Manufacture Fairchild Semiconductor
Datasheet
Download FGH30T65UPDT Datasheet



FGH30T65UPDT
November 2013
FGH30T65UPDT
650V, 30A Field Stop Trench IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.65 V (Typ.) @ IC = 30 A
• 100% of Parts Tested ILM(2)
• High Input Impedance
• Tightened Parameter Distribution
• RoHS Compliant
• Short Circuit Ruggedness > 5 us @ 25oC
E
C
G
General Description
Using novel field stop trench IGBT technology, Fairchild’s new
series of field stop trench IGBTs offer the optimum performance
for solar inverter , UPS and digital power generator where low
conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Digital Power Generator
C
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM(1)
ILM(2)
IF
IFM(1)
PD
SCWT
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
Clamped Inductive Load Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
2: IC = 90 A, VCC = 400 V, Rg = 20
Thermal Characteristics
Symbol
Parameter
RθJC(IGBT)
RθJC(Diode)
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2013 Fairchild Semiconductor Corporation
FGH30T65UPDT Rev. C1
1
G
E
Ratings
650
± 20
± 25
60
30
90
90
60
30
150
250
125
5
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
us
oC
oC
oC
Typ.
-
-
-
Max.
0.60
1.2
40
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com



FGH30T65UPDT
Package Marking and Ordering Information
Part Number
FGH30T65UPD_F155
Top Mark
FGH30T65UPD
Package
TO-247 G03
Packing
Method
Tube
Reel Size Tape Width Quantity
N/A N/A
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES
∆ΤJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 uA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 30 mA, VCE = VGE
IC = 30 A, VGE = 15 V
IC = 30 A, VGE = 15 V,
TC = 175oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tsc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Qg Total Gate Charge
Qge Gate to Emitter Charge
Qgc Gate to Collector Charge
VCC = 400 V, IC = 30 A,
RG = 8 , VGE = 15 V,
Inductive Load, TC = 25oC
VCC = 400 V, IC = 30 A,
RG = 8 , VGE = 15V,
Inductive Load, TC = 175oC
VGE = 15 V, VCC < 400 V,
Rg = 10
VCE = 400 V, IC = 30 A,
VGE = 15 V
650 - - V
- 0.65 - V/oC
- - 250 µA
-
-
±400
nA
4.0 6.0 7.5
- 1.65 2.3
- 2.1 -
V
V
V
- 2280 -
- 85 -
- 40 -
pF
pF
pF
- 22 -
- 26 -
- 139 -
- 18 -
- 0.76 -
- 0.40 -
- 1.16 -
- 22 -
- 30 -
- 151 -
- 19 -
- 1.20 -
- 0.53 -
- 1.73 -
5--
- 155 -
- 21 -
- 91 -
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
us
nC
nC
nC
©2013 Fairchild Semiconductor Corporation
FGH30T65UPDT Rev. C1
2
www.fairchildsemi.com







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