IGBT. FGH40T65SHDF Datasheet

FGH40T65SHDF IGBT. Datasheet pdf. Equivalent

Part FGH40T65SHDF
Description IGBT
Feature FGH40T65SHDF — 650 V, 40 A Field Stop Trench IGBT FGH40T65SHDF 650 V, 40 A Field Stop Trench IGBT .
Manufacture Fairchild Semiconductor
Datasheet
Download FGH40T65SHDF Datasheet




FGH40T65SHDF
FGH40T65SHDF
650 V, 40 A Field Stop Trench IGBT
May 2014
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.45 V ( Typ.) @ IC = 40 A
• 100% of the Parts tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer superior conduction and
switching performance and easy parallel operation. This device
is well suited for the resonant or soft switching application such
as induction heating and MWO.
Applications
• Induction Heating, MWO
E
C
G
C
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ILM (1)
ICM (2)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 30 , Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
G
E
FGH40T65SHDF_F155
650
± 20
± 30
80
40
120
120
40
20
60
268
134
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
©2014 Fairchild Semiconductor Corporation
FGH40T65SHDF Rev. C1
1
www.fairchildsemi.com



FGH40T65SHDF
Thermal Characteristics
Symbol
RθJC (IGBT)
RθJC (Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FGH40T65SHDF_F155
0.56
1.75
40
Unit
oC/W
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
FGH40T65SHDF FGH40T65SHDF_F155
Package
TO-247 G03
Reel Size
-
Tape Width
-
Qty per Tube
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 1 mA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 40 mA, VCE = VGE
IC = 40 A, VGE = 15 V
IC = 40 A, VGE = 15 V,
TC = 175oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Ets
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
VCC = 400 V, IC = 40 A,
RG = 6 , VGE = 15 V,
Inductive Load, TC = 25oC
VCC = 400 V, IC = 40 A,
RG = 6 , VGE = 15 V,
Inductive Load, TC = 175oC
650 - - V
- 0.6 - V/oC
- - 250 µA
-
-
± 400
nA
3.5 5.5 7.5
-
1.45
1.81
- 1.8 -
V
V
V
- 1982 -
- 70 -
- 25 -
pF
pF
pF
- 18 -
- 27 -
- 64 -
- 3-
- 1.22 -
- 0.44 -
- 1.66 -
- 18 -
- 31 -
- 70 -
- 56 -
- 1.78 -
- 0.78 -
- 2.56 -
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
©2014 Fairchild Semiconductor Corporation
FGH40T65SPHDF Rev. C1
2
www.fairchildsemi.com







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