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FGH40T65SHDF

Fairchild Semiconductor

IGBT

FGH40T65SHDF — 650 V, 40 A Field Stop Trench IGBT FGH40T65SHDF 650 V, 40 A Field Stop Trench IGBT May 2014 Features •...


Fairchild Semiconductor

FGH40T65SHDF

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Description
FGH40T65SHDF — 650 V, 40 A Field Stop Trench IGBT FGH40T65SHDF 650 V, 40 A Field Stop Trench IGBT May 2014 Features Maximum Junction Temperature : TJ = 175oC Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.45 V ( Typ.) @ IC = 40 A 100% of the Parts tested for ILM(1) High Input Impedance Fast Switching Tighten Parameter Distribution RoHS Compliant General Description Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO. Applications Induction Heating, MWO E C G C COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ILM (1) ICM (2) IF IFM PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Tra...




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