IGBT. FGH40T65SPD Datasheet

FGH40T65SPD IGBT. Datasheet pdf. Equivalent

Part FGH40T65SPD
Description IGBT
Feature FGH40T65SPD — 650 V, 40 A Field Stop Trench IGBT FGH40T65SPD 650 V, 40 A Field Stop Trench IGBT Oc.
Manufacture Fairchild Semiconductor
Datasheet
Download FGH40T65SPD Datasheet



FGH40T65SPD
FGH40T65SPD
650 V, 40 A Field Stop Trench IGBT
October 2013
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.85 V ( Typ.) @ IC = 40 A
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
• Short Circuit Ruggedness > 5 us @ 25oC
E
C
G
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
Applications
• Solar Inverter UPS, Welder, PFC, Telecom, ESS
C
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM
IF
IFM
PD
SCWT
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
FGH40T65SPD_F155
650
20
30
80
40
120
40
20
120
267
134
5
-55 to +175
-55 to +175
300
Typ.
-
-
-
Max.
0.56
1.71
40
Unit
V
V
V
A
A
A
A
A
A
W
W
s
oC
oC
oC
Unit
oC/W
oC/W
oC/W
©2013 Fairchild Semiconductor Corporation
FGH40T65SPD_F155 Rev. C0
1
www.fairchildsemi.com



FGH40T65SPD
Package Marking and Ordering Information
Device Marking
Device
FGH40T65SPD FGH40T65SPD_F155
Package
TO-247 G03
Reel Size
-
Tape Width
-
Qty per Tube
30ea
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 1 mA
VGE = 0 V, IC = 1mA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 40 mA, VCE = VGE
IC = 40 A, VGE = 15 V
ITCC==4107A5,oVCGE = 15 V,
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Ets
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Ets
TSC
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
VCC = 400 V, IC = 40 A,
RInGdu=ct6ive ,LVoGaEd,=T1C5=V2,5oC
VCC = 400 V, IC = 40 A,
RInGdu=ct6ive ,LVoGaEd,=T1C5=V1,75oC
VCC = 400 V, VGE = 15 V,
RG = 10
650 - - V
- 0.6 - V/oC
- - 250 A
-
-
400
nA
4 5.5 7.5
- 1.85 2.4
- 2.51 -
V
V
V
- 1370 -
- 94 -
- 16 -
pF
pF
pF
- 16 -
- 42 -
- 37 -
- 11 -
- 1.16 -
- 0.28 -
- 1.44 -
- 14 -
- 49 -
- 38 -
- 18 -
- 1.54 -
- 0.52 -
- 2.06 -
5--
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
s
©2013 Fairchild Semiconductor Corporation
FGH40T65SPD_F155 Rev. C0
2
www.fairchildsemi.com







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)