IGBT. FGH25T120SMD Datasheet

FGH25T120SMD IGBT. Datasheet pdf. Equivalent

Part FGH25T120SMD
Description IGBT
Feature FGH25T120SMD — 1200 V, 25 A Field Stop Trench IGBT August 2014 FGH25T120SMD 1200 V, 25 A Field Sto.
Manufacture Fairchild Semiconductor
Datasheet
Download FGH25T120SMD Datasheet




FGH25T120SMD
August 2014
FGH25T120SMD
1200 V, 25 A Field Stop Trench IGBT
Features
• FS Trench Technology, Positive Temperature Coefficient
• High Speed Switching
• Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 25 A
• 100% of The Parts Tested for ILM(1)
• High Input Impedance
• RoHS Compliant
Applications
• Solar Inverter, Welder, UPS & PFC Applications.
General Description
Using innovative field stop trench IGBT technology, Fairchild’s
new series of field stop trench IGBTs offer the optimum
performance for hard switching application such as solar
inverter, UPS, welder and PFC applications.
E
C
G
C
COLLECTOR
(FLANGE)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ILM (1)
ICM (2)
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Clamped Inductive Load Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
IF
Diode Continuous Forward Current
@ TC = 25oC
Diode Continuous Forward Current
@ TC = 100oC
IFM Diode Maximum Forward Current
PD
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1. Vcc = 600 V, VGE = 15 V, IC = 100 A, RG = 23
2. Limited by Tjmax
Inductive Load
©2013 Fairchild Semiconductor Corporation
FGH25T120SMD Rev. C2
1
G
E
Ratings
1200
±25
±30
50
25
100
100
50
25
200
428
214
-55 to +175
-55 to +175
300
Typ.
--
--
--
Max.
0.35
1.4
40
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com



FGH25T120SMD
Package Marking and Ordering Information
Device Marking
Device
Package
FGH25T120SMD FGH25T120SMD_F155 TO-247G03
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0 V, IC = 250 uA
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 25 mA, VCE = VGE
IC = 25 A, VGE = 15 V
TC = 25oC
IC = 25 A, VGE = 15 V,
TC = 175oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 600 V, IC = 25 A,
RG = 23 Ω, VGE = 15 V,
Inductive Load, TC = 25oC
VCC = 600 V, IC = 25 A,
RG = 23 Ω, VGE = 15 V,
Inductive Load, TC = 175oC
VCE = 600 V, IC = 25 A,
VGE = 15 V
1200
-
-
V
- - 250 uA
-
-
±400
nA
4.9 6.2 7.5
- 1.8 2.4
- 1.9 -
V
V
V
- 2800 -
- 105 -
- 60 -
pF
pF
pF
- 40 -
- 45 -
- 490 -
- 12 -
- 1.74 -
- 0.56 -
- 2.30 -
- 40 -
- 48 -
- 520 -
- 64 -
- 2.94 -
- 1.09 -
- 4.03 -
- 225 -
- 20 -
- 128 -
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
©2013 Fairchild Semiconductor Corporation
FGH25T120SMD Rev. C2
2
www.fairchildsemi.com







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