IGBT. FGA30T65SHD Datasheet

FGA30T65SHD IGBT. Datasheet pdf. Equivalent

Part FGA30T65SHD
Description IGBT
Feature FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT Dece.
Manufacture Fairchild Semiconductor
Datasheet
Download FGA30T65SHD Datasheet




FGA30T65SHD
FGA30T65SHD
650 V, 30 A Field Stop Trench IGBT
December 2014
Features
• Maximum Junction Temperature : TJ =175oC
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 30 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
C
G
C
E
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ILM (1)
ICM (2)
IF
IFM (2)
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC =90 A, RG = 30  Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
©2014 Fairchild Semiconductor Corporation
FGA30T65SHD Rev. C0
1
G
E
FGA30T65SHD
650
20
30
60
30
90
90
40
20
90
238
119
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com



FGA30T65SHD
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FGA30T65SHD
0.63
1.71
40
Package Marking and Ordering Information
Part Number Top Mark Package Packaging Method Reel Size Tape Width
FGA30T65SHD FGA30T65SHD TO-3PN
Tube
--
Unit
oC/W
oC/W
oC/W
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES /
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 1 mA
IC = 1 mA, Reference to 25oC
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 30 mA, VCE = VGE
IC = 30 A, VGE = 15 V
ITCC==3107A5,oVCGE = 15 V,
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
VCC = 400 V, IC = 30 A,
RInGdu=ct6ive ,LVoGaEd,=T1C5=V2,5oC
VCC = 400 V, IC = 30 A,
RInGdu=ct6ive ,LVoGaEd,=T1C5=V1,75oC
650 - - V
- 0.6 - V/oC
- - 250 A
-
-
±400
nA
4.0 5.5 7.5
- 1.6 2.1
- 2.14 -
V
V
V
- 1558 -
- 64 -
- 19 -
- 14.4 -
- 16 -
- 52.8 -
- 9.6 -
- 598 -
- 167 -
- 765 -
- 14.4 -
- 19.2 -
- 59.2 -
- 8-
- 992 -
- 303 -
- 1295 -
pF
pF
pF
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
©2014 Fairchild Semiconductor Corporation
FGA30T65SHD Rev. C0
2
www.fairchildsemi.com







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