FGA50N100BNTD2

FGA50N100BNTD2 — 1000 V NPT Trench IGBT FGA50N100BNTD2 1000 V NPT Trench IGBT Features High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A High Input Impedance Built-in Fast Recovery Diode RoHS Compliant Applications UPS, Welder November 2013 General Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications. C GCE TO-3P Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25oC @ TC = 100oC Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current @ TC = 25oC @ TC = 100oC Maximum ...