IGBT. FGA50N100BNTD2 Datasheet

FGA50N100BNTD2 IGBT. Datasheet pdf. Equivalent

Part FGA50N100BNTD2
Description IGBT
Feature FGA50N100BNTD2 — 1000 V NPT Trench IGBT FGA50N100BNTD2 1000 V NPT Trench IGBT Features • High Speed.
Manufacture Fairchild Semiconductor
Datasheet
Download FGA50N100BNTD2 Datasheet




FGA50N100BNTD2
FGA50N100BNTD2
1000 V NPT Trench IGBT
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A
• High Input Impedance
• Built-in Fast Recovery Diode
• RoHS Compliant
Applications
• UPS, Welder
November 2013
General Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1000V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device offers the optimum perfor-
mance for hard switching application such as UPS, welder
applications.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25oC
@ TC = 100oC
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(DIODE)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
1
G
E
Ratings
1000
± 25
50
35
200
30
15
150
156
63
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
Typ.
-
-
-
Max.
0.8
1.2
40.0
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com



FGA50N100BNTD2
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method
FGA50N100BNTD2 FGA50N100BNTD2 TO-3P
Tube
Reel Size
N/A
Tape Width Quantity
N/A 30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0 V, IC = 1 mA
VCE = 1000 V, VGE = 0 V
VGE = ±25 V, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 60 mA, VCE = VGE
IC = 10 A, VGE = 15 V
IC = 60 A, VGE = 15 V
IC = 60 A, VGE = 15 V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 10 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 600 V, IC = 60 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25oC
VCE = 600 V, IC = 60 A,
VGE = 15 V, TC = 25oC
1000
-
-
V
- - 1.0 mA
-
-
±500
nA
4.0 5.5 7.0
- 1.5 1.8
2.5 2.9
- 3.3 -
V
V
V
V
- 6000 -
- 260 -
- 200 -
pF
pF
pF
- 34 - ns
- 68 - ns
- 243 -
ns
-
65 100
ns
-
257 350
nC
- 45 - nC
- 95 - nC
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
VFM Diode Forward Voltage
trr Diode Reverse Recovery Time
IF = 15 A
IF = 60 A
IF = 60 A, diF/dt = 100 A/us
IR
Instantaneous Reverse Current
VRRM = 1000 V
-
-
-
-
2.9 3.2
4.0 4.7
60 75
-2
V
V
ns
A
©2009 Fairchild Semiconductor Corporation
FGA50N100BNTD2 Rev. C1
2
www.fairchildsemi.com







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