IGBT. FGA50N100BNTD Datasheet

FGA50N100BNTD IGBT. Datasheet pdf. Equivalent

Part FGA50N100BNTD
Description IGBT
Feature FGA50N100BNTD — 1000 V NPT Trench IGBT November 2013 FGA50N100BNTD 1000 V NPT Trench IGBT General.
Manufacture Fairchild Semiconductor
Datasheet
Download FGA50N100BNTD Datasheet




FGA50N100BNTD
November 2013
FGA50N100BNTD
1000 V NPT Trench IGBT
General Description
Using Fairchild's proprietary trench design and advanced
NPT technology, the 1000V NPT IGBT offers superior
conduction and switching performances, high avalanche
ruggedness and easy parallel operation. This device offers
the optimum performance for hard switching application
such as UPS, welder applications.
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A
• High Input Impedance
• Built-in Fast Recovery Diode
Application
UPS, Welder, Induction Heating, Microwave Oven
C
GCE
TO-3P
Absolute Maximum Ratings TC = 25C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25C
@ TC = 100C
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25C
@ TC = 100C
@ TC = 25C
@ TC = 100C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(DIODE)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
Ratings
1000
25
50
35
100
30
15
156
63
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.8
2.4
25
Unit
V
V
A
A
A
A
A
W
W
C
C
C
Unit
C/W
C/W
C/W
©2006 Fairchild Semiconductor Corporation
FGA50N100BNTD Rev. C1
1
www.fairchildsemi.com



FGA50N100BNTD
Package Marking and Ordering Information
Part Number
Top Mark Package
FGA50N100BNTDTU FGA50N100BNTD TO-3P
Packing
Method
Rail / Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30
Electrical Characteristics of IGBT TC = 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
ICES
IGES
Collector Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VGE = 0 V, IC = 1 mA
VCE = 1000 V, VGE = 0 V
VGE = ± 25 V, VCE = 0 V
IC = 60 mA, VCE = VGE
IC = 10 A, VGE = 15 V
IC = 60 A, VGE = 15 V
VCE=10 V, VGE = 0 V,
f = 1 MHz
VCC = 600 V, IC = 60 A,
RG = 51 , VGE=15 V,
Resistive Load, TC = 25C
VCE = 600 V, IC = 60 A,
VGE = 15 V , , TC = 25C
Electrical Characteristics of DIODE TC = 25C unless otherwise noted
Symbol
VFM
trr
IR
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Instantaneous Reverse Current
Test Conditions
IF = 15 A
IF = 60 A
IF = 60 A diF/dt = 20 A/us
VRRM = 1000 V
Min. Typ. Max. Unit
1000
--
--
-- --
V
-- 1.0 mA
-- ± 500 nA
4.0 5.0 7.0
-- 1.5 1.8
-- 2.5 2.9
V
V
V
-- 6000 --
-- 260 --
-- 200 --
pF
pF
pF
-- 140 --
ns
-- 320 --
ns
-- 630 --
ns
-- 130 250 ns
-- 275 350 nC
-- 45 -- nC
-- 95 -- nC
Min.
--
--
--
Typ.
1.2
1.8
1.2
0.05
Max.
1.7
2.1
1.5
2
Unit
V
V
us
uA
©2006 Fairchild Semiconductor Corporation
FGA50N100BNTD Rev. C2
2
www.fairchildsemi.com







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)