DatasheetsPDF.com

FGA50N100BNTD

Fairchild Semiconductor

IGBT

FGA50N100BNTD — 1000 V NPT Trench IGBT November 2013 FGA50N100BNTD 1000 V NPT Trench IGBT General Description Using F...


Fairchild Semiconductor

FGA50N100BNTD

File Download Download FGA50N100BNTD Datasheet


Description
FGA50N100BNTD — 1000 V NPT Trench IGBT November 2013 FGA50N100BNTD 1000 V NPT Trench IGBT General Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications. Features High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A High Input Impedance Built-in Fast Recovery Diode Application UPS, Welder, Induction Heating, Microwave Oven C GCE TO-3P Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25C @ TC = 100C Diode Continuous Forward Current Diode Continuous Forward Current Maximum Power Dissipa...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)