IGBT. FGA20S125P Datasheet

FGA20S125P IGBT. Datasheet pdf. Equivalent

Part FGA20S125P
Description IGBT
Feature FGA20S125P — 1250 V, 20 A Shorted-anode IGBT November 2014 FGA20S125P 1250 V, 20 A Shorted-anode I.
Manufacture Fairchild Semiconductor
Datasheet
Download FGA20S125P Datasheet




FGA20S125P
November 2014
FGA20S125P
1250 V, 20 A Shorted-anode IGBT
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 2.0 V @ IC = 20 A
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microwave oven
General Description
Using advanced field stop trench and shorted anode technol-
ogy, Fairchild’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for soft switching
applications. The device can operate in parallel configuration
with exceptional avalanche capability. This device is designed
for induction heating and microwave oven.
C
GCE
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM (1)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
IF
Diode Continuous Forward Current
@ TC = 25oC
IF
Diode Continuous Forward Current
@ TC = 100oC
PD
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1: Limited by Tjmax
G
E
FGA20S125P_SN00336
1250
±25
40
20
60
40
20
250
125
-55 to +175
-55 to +175
300
Typ.
--
--
Max.
0.6
40
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
© 2014 Fairchild Semiconductor Corporation
FGA20S125P Rev. C1
1
www.fairchildsemi.com



FGA20S125P
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FGA20S125P
FGA20S125P
_SN00336
TO-3PN
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 1 mA
Collector Cut-Off Current
G-E Leakage Current
VCE = 1250, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
VFM Diode Forward Voltage
IC = 20mA, VCE = VGE
IC = 20A, VGE = 15V
TC = 25oC
IC = 20A, VGE = 15V,
TC = 125oC
IC = 20A, VGE = 15V,
TC = 175oC
IF = 20A, TC = 25oC
IF = 20A, TC = 175oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characcteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 600V, IC = 20A,
RG = 10, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 600V, IC = 20A,
RG = 10, VGE = 15V,
Resistive Load, TC = 175oC
VCE = 600V, IC = 20A,
VGE = 15V
1250
-
-
V
- 1.2 - V/oC
- - 1 mA
-
-
±500
nA
4.5 6.0 7.5
- 2.0 2.5
- 2.22 -
- 2.44 -
- 1.75 2.4
- 2.22 -
V
V
V
V
V
V
- 1360 -
- 40 -
- 26 -
pF
pF
pF
- 10 -
- 260 -
- 400 -
- 100 -
- 0.74 -
- 0.50 -
- 1.24 -
- 11 -
- 320 -
- 420 -
- 250 -
- 0.94 -
- 1.23 -
- 2.17 -
- 153 -
- 12 -
- 98 -
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
© 2014 Fairchild Semiconductor Corporation
FGA20S125P Rev. C1
2
www.fairchildsemi.com







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