IGBT. FGL35N120FTD Datasheet

FGL35N120FTD IGBT. Datasheet pdf. Equivalent

Part FGL35N120FTD
Description IGBT
Feature FGL35N120FTD — 1200 V, 35 A Field Stop Trench IGBT FGL35N120FTD 1200 V, 35 A Field Stop Trench IGBT.
Manufacture Fairchild Semiconductor
Datasheet
Download FGL35N120FTD Datasheet




FGL35N120FTD
FGL35N120FTD
1200 V, 35 A Field Stop Trench IGBT
November 2013
Features
• Field Stop Trench Technology
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 35 A
• High Input Impedance
Applications
• Solar Inverter, UPS, Welder, PFC
General Description
Using advanced field stop trench IGBT technology, Fairchild’s
1200V trench IGBTs offer the optimum performance for hard
switching application such as solar inverter, UPS, welder appli-
cations.
GCE
TO-264 3L
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2010 Fairchild Semiconductor Corporation
FGL35N120FTD Rev. C1
1
C
G
E
Ratings
1200
25
70
35
105
80
40
368
147
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Max.
0.34
0.9
25
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com



FGL35N120FTD
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method
FGL35N120FTDTU FGL35N120FTD
TO-264
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0 V, IC = 250 A
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 35 mA, VCE = VGE
IC = 35 A, VGE = 15 V
IC = 35 A, VGE = 15 V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 600 V, IC = 35 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25oC
VCC = 600 V, IC = 35 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 125oC
VCE = 600 V, IC = 35 A,
VGE = 15 V
1200
-
-
--V
- 1 mA
-
±250
nA
3.5 6.2 7.5
- 1.68 2.2
- 2.0 -
V
V
V
- 5090 -
- 180 -
- 95 -
pF
pF
pF
- 34 -
- 63 -
- 172 -
- 107 -
- 2.5 -
- 1.7 -
- 4.2 -
- 33 -
- 66 -
- 180 -
- 146 -
- 3.1 -
- 2.1 -
- 5.2 -
- 210 -
- 42 -
- 101 -
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
©2010 Fairchild Semiconductor Corporation
FGL35N120FTD Rev. C1
2
www.fairchildsemi.com







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