Avalanche Photodiode. AD500-9 Datasheet

AD500-9 Photodiode. Datasheet pdf. Equivalent

Part AD500-9
Description Avalanche Photodiode
Feature AD500-9 TO52S1F2 Avalanche Photodiode for NIR with bandpass filter for 905 nm Special characteristi.
Manufacture Silicon Sensor
Datasheet
Download AD500-9 Datasheet




AD500-9
AD500-9 TO52S1F2
Avalanche Photodiode for NIR
with bandpass filter for 905 nm
Special characteristics:
quantum efficiency > 70 % at λ 890 - 915 nm
high speed, low noise
500 µm diameter active area
low slope multiplication curve
Parameters:
Active Area
Dark Current 1)
(M = 100)
Total Capacitance 1)
(M = 100)
Breakdown Voltage UBR
(at ID = 2µA)
Temperature Coefficient of UBR
Spectral Responsivity
(at 905 nm; M = 100)
Cut-off Frequency
(-3dB; M = 100)
905 nm
Rise Time
(M = 100; 50 Ω)
905 nm
Optimum Gain
"Excess Noise" factor
(M = 100)
"Excess Noise" index
(M = 100)
Noise Current
(M = 100)
N.E.P.
(M = 100, 905 nm)
Operating Temperature
Storage Temperature
0.196 mm2
500 µm
max. 5 nA
typ. 0.5 - 1 nA
typ. 1.2 pF
120 - 300 V
typ. > 200 V
typ. 1.55 V/K
min. 48 A/W
typ. 52 A/W
typ. 0.5 GHz
550 ps
50 - 60
typ. 2.5
typ. 0.2
max. 1 pA/Hz½
max. 2 * 10-14 W/Hz½
-20 ... +70 °C
-55 ... +100 °C
1) measurement conditions:
Setup of photo current 10 nA at M = 1 and irradiation by an IRED
(905 nm, 80 nm bandwidth).
Increase the photo current up to 1 µA, (M = 100) by internal multiplication
due to an increasing bias voltage.
RoHS compliant
Package (TO52S1F2):
PIN 4
CASE
PIN 1
CATHODE
PIN 3
ANODE
PIN 1
PIN 4
PIN 3
4.70
2.0 min.
2.54
PIN CIRCLE
Chip: AD500-9
0.500 diameter
active area
5.40
0.46
Filter removed
to show APD
placement
www.silicon-sensor.com
Version: 09-08-31
Order number: 500590
www.pacific-sensor.com



AD500-9
60,000
50,000
40,000
30,000
20,000
10,000
0,000
700
1,000
Spectral Responsivity; Gain: 100
Series - 9
750
800
850
900
950
1000
1050
1100
Wavelength [nm]
100,000
90,000
80,000
70,000
60,000
50,000
40,000
30,000
20,000
10,000
0,000
700
ID = f (UR/UBR)
AD500-9 with bandpass filter for 905 nm
1000,00
Quantum Efficiency; Gain: 100
Series -9
750
800
850
900
950
1000
1050
1100
Wavelength [nm]
Gain = f (UR/UBR)
AD500-9 with bandpass filter for 905 nm
0,100
100,00
0,010
10,00
0,001
0,000
0,200
0,400
UR/UBR
0,600
0,800
1,000
1,00
0,000
0,200
0,400
0,600
UR/UBR
0,800
1,000
Bias supply voltage
Maximum Ratings:
ƒ max. electrical power dissipation
ƒ max. optical peak value, once
ƒ max. continous optical operation
ƒ ( Pelectr. = Popt. * Sabs * M * UR )
100 mW at 22 °C
200 mW for 1 s
IPh (DC) 250 µA 1 mA for signal 50 µs "on" / 1 ms "off"
Current limiting resistor
Application Hints:
ƒ Current should be limited by a protecting resistor or current limiting -
IC inside the power supply.
ƒ Use of low noise read-out - IC.
ƒ For high gain applications bias voltage should be temperature compensated.
ƒ For low light level applications, blocking of ambient light should be used.
Handling Precautions:
APD
min. 0,1 µF,
closest to APD
Diode, protective circuit
Read-out circuit or
f.e. 50Ω Load resistance
ƒ Soldering temperature
260 °C for max. 10 s. The device must be protected against solder flux vapour!
ƒ min. Pin - length
2 mm
ƒ ESD - protection
Standard precautionary measures are sufficient.
ƒ Storage
Store devices in conductive foam.
ƒ Avoid skin contact with window!
ƒ Clean window with Ethyl alcohol if necessary.
ƒ Do not scratch or abrade window.
Disclaimer: Due to our policy of continued development, specifications are subject to change without notice.
European, International Sales:
Silicon Sensor GmbH
Wilhelminenhofstraße 76/77
12459 Berlin
Germany
Phone: +49 (0)30-63 99 23 10
Fax: +49 (0)30-63 99 23 33
E-Mail: sales@silicon-sensor.de
U.S.A.:
Pacific Silicon Sensor, Inc.
5700 Corsa Avenue #105
Westlake Village
CA 91362 USA
Phone: +1-818-706-3400
Fax: +1-818-889-7053
E-Mail: sales@pacific-sensor.com







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