Static RAM. TC51832SP-85 Datasheet

TC51832SP-85 RAM. Datasheet pdf. Equivalent

Part TC51832SP-85
Description CMOS Pseudo Static RAM
Feature TOSHIBA MUS MEMORY PRODUClI 32,768 WORD X 8 CMOS PSEUDO STATIC RAM SILICON MONOLITHIC SILICON GATE .
Manufacture Toshiba
Datasheet
Download TC51832SP-85 Datasheet



TC51832SP-85
TOSHIBA MUS MEMORY PRODUClI
32,768 WORD X 8 CMOS PSEUDO STATIC RAM
SILICON MONOLITHIC
SILICON GATE CMOS
TC51832P-85, TC51832P-l0
TC51832P-12
IOEseRI PrIm! I
The TCSl832P is a 2S6K bit high speed cnos pseudo static RAH organized as 32,768
Hords by 8 bits. The TCSl832P utilized one transistor dynamic memory cell ~vith C~IOS
peripheral circuit to provide large capacity, high speed and low power features. System
oriented features include single pot"er supply of SV±lO% torelance. The OE/RFSH input
allotvs t~1I'O types of refresh operation - auto refresh .:lnd self refresh. The TCSl832P
also features static RA1-1 like ~.,rrite function that the input data is ~.Jritten into the
~emory cell at the rising edge of R/W, thus being easy to interface with microprocessor.
The TCSI832P is a pin-compatible tvith 256K bit GIOS static RA~'I - TCS52S7P and is
r.;ouided .J. standard 0.6 inch ~Jid th plas tic DIP.
IFEATURESI
-- -• Organization: 32,768 \·:ord x 3 bit
• Fast Access Time and Cycle Time
TC51832P-85
TC51832P-IO
tCEA CE Access Time . G5ns
lOOns
tOEA OE Access Time 35ns
40ns
t1C Cycle Time
USns
160ns
TC51832P-12
120ns
SOns
I90ns
• Single Power Supply: SV~lO%
• Static RA1·! like ~irite Function
• All inputs and outputs: TTL Compatible
IIPHI COnNECTION
(TOP V[f0N)
• Low Power Dissipation
Operating
303~J(TC51332P-85)
248mW(TCSI832P-IO)
220mhl (TC518 32P-12)
Standby
5.5mH
Self Refresh: 5.SmW
• THO types of Refresh Cperation
Cilpability
Auto Refresh
Self Refresh
• Pin Compatible with 256K bit aIDS
Static RAH TC552S7P
Al4
Al2
A7
A6
A5
A4
A3
A2
Al
AO
I/O I
I/O 2
I/03
GND
VDD
R/W
Al3
A8
A9
All
OE/RFSH
AIO
CE
I/08
I/07
I/06
I/05
I/04
IBLOCK OIAGRMII
VDD GND
. Al4-A8
COLUMN
DECODER
iPIIl rlAr'IEsl
AO 'V Al4
R/~~
Address Inputs
Read/Hrite Control
Input
OE/RFSH
Output Enable/Refresh
Input
CE Chip Enable Input
II/ol 'V 1/08 Data Input/Output
VDD Power (+5V)
GND Ground
A7-AO
R/W o---~~-t--------------------------------~
- 8-107-
00
;0::::r
~
;0::::r



TC51832SP-85
TC51832P-85, TC51832P-l0
TC51832P-12
r1AX mUM RATI riGS
STIIBOL
IT~1
VIN Input Voltage
VOUT
Output Voltage
VOO Power Supply Voltage
TOPR
Operating Temperature
TSTG
Storage Temperature
TSOLOER Soldering Temperature· Tine
PD Pm'ler Oissipation
lOUT
Short Circuit Output Current
RATING
-1.0",7.0
-1.0",7.0
-1.0"'7.0
0", 70
-55'" 150
260 • 10
600
50
UNITS
V
V
V
°c
°c
°c • sec
mtJ
rnA
NOTES
1
D.C. RECGr;illENOED OPERATING CONDITIONS
SY:·mOL
VOO
VIH
VIL
ITEH
Pm.,rer Supply Voltage
Input High Voltage
Input lOH Voltage
(Ta=O '" 70°C)
HIN. TYP.
4.5 5.0
2.4 -
-1.0 -
~fAX.
5,5
6.5
0.8
U:HT
V
V
V
~OTES
2
D.C. ELECTRICAL CHARACTERISTICS (Voo=5V±10%, Ta=0",70°C)
SY~lBOL
PAR~·!ETER
OPERATI~G CURRE~T
1000 Average Power Supply Operating Current
(CE, Address Cycleling: tRC=tRC ~.fIm
TC5l832P-85
TC5l832P-lO
TC5l832P-12
STANDBY CURRENT 1
LOOSl Power Supply Standby Current, TTL Level Input
(CE=OE/RFSH=VIH)
SELF REFRESH CURRE~T
IOOF Average Power Supply Self Refresh Current
(CE=VOO-O. 2V, OE/RFSH=0.2V)
I~;PUT LEAKAGE CURRE~T
II(L) Input Leakage Current, any Input
(OV ~ Vel ~ VOO, All Other Inputs not under Test=OV)
IO(L)
OUTPUT LEAKAGE CURRE~T
(OOUT is disable, OV ~ VOUT ~ VOO)
VOH
OUTPUT HIGH LEVEL
Output "H" Level Voltage (IOUT= -SmA)
OUTPUT LmJ LEVEL
VOL Output "L" Level Voltage (1OUT=4.2mA)
~IIN
-
-
-
~rAX. mHTS ~;OTES
55
45 li'A 3,4
4D
- 1 rnA
- 1 IT.'..-\
-10 10 IiA
-lQ 10 uA
2.4 - V
- 0.4 V
- 8-108-







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