SCHOTTKY RECTIFIER. 175BGQ030J Datasheet

175BGQ030J RECTIFIER. Datasheet pdf. Equivalent

Part 175BGQ030J
Description SCHOTTKY RECTIFIER
Feature SCHOTTKY RECTIFIER Bulletin PD-20997 rev. E 12/02 175BGQ030 175BGQ030J 175 Amp Major Ratings and C.
Manufacture International Rectifier
Datasheet
Download 175BGQ030J Datasheet




175BGQ030J
SCHOTTKY RECTIFIER
Bulletin PD-20997 rev. E 12/02
175BGQ030
175BGQ030J
175 Amp
Major Ratings and Characteristics
Characteristics
175BGQ030 Units
IF(AV) Rectangular waveform
@ TC
IDC Maximum
VRRM
IFSM @ tp = 5 µs sine
VF @175Apk typical
@TJ
TJ range
175
115
248
30
8000
0.45
150
-55 to 150
A
°C
A
V
A
V
°C
°C
Description/ Features
The 175BGQ030 Schottky rectifier has been optimized for ultra low
forward voltage drop specifically for low voltage output in high
current AC/DC power supplies.
The proprietary barrier technology allows for reliable operation up
to 150°C junction temperature. Typical applications are in
switching power supplies, converters, reverse battery protection,
and redundant power subsystems.
150°C TJ operation
High Frequency Operation
Ultra low forward voltage drop
Continuous High Current operation
Guard ring for enhanced ruggedness and long term
reliability
PowIRtabTM package
175BGQ030
Case Styles
175BGQ030J
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1



175BGQ030J
175BGQ030, 175BGQ030J
Bulletin PD-20997 rev. E 12/02
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
175BGQ030
30
Parameters
175BGQ Units
Conditions
IF(AV) Max.AverageForwardCurrent
IF(RMS) RMS ForwardCurrent
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent
EAS Non-RepetitiveAvalancheEnergy
IAR RepetitiveAvalancheCurrent
175
248
8000
1500
80
12
A 50%dutycycle@TC=115°C,rectangularwaveform
A TC=114°C
5µs Sineor3µsRect.pulse Following any rated
A load condition and
10ms Sine or 6ms Rect. pulse with rated VRRMapplied
mJ TJ = 25 °C, IAS= 12 Amps, L = 1.12 mH
A Currentdecayinglinearlytozeroin1µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Electrical Specifications
Parameters
175BGQ Units
Typ. Max.
Conditions
VFM Forward Voltage Drop
(1) (2) 0.46 0.48
0.53 0.56
V
V
@ 100A
@ 175A
TJ = 25 °C
0.35 0.38 V
0.45 0.49 V
@ 100A
@ 175A
TJ = 150 °C
IRM Reverse Leakage Current (1)
VF(TO) Threshold Voltage
rt Forward Slope Resistance
CT Max. Junction Capacitance
LS Typical Series Inductance
dv/dt Max. Voltage Rate of Change
1.3 4.5 mA
450 650 mA
160 220 mA
1400 2000 mA
0.242 V
1.4 m
8500 pF
3.5 nH
10000 V/ µs
TJ = 25 °C
TJ = 125°C
TJ = 125 °C
TJ = 150 °C
TJ = TJ max.
VR = rated VR
VR = 15V
VR = 30V
VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C
Measured from tab to mounting plane
(Rated VR)
Thermal-Mechanical Specifications
(1) Pulse Width < 300µs, Duty Cycle < 2%
(2) VFM = VF(TO) + rt x IF
Parameters
TJ Max.JunctionTemperatureRange
Tstg Max.StorageTemperatureRange
RthJC Max.ThermalResistanceJunction
toCase
RthCS Typical Thermal Resistance,Case to
Heatsink
wt ApproximateWeight
T MountingTorque
Min.
Max.
Case Style
175BGQ Units
Conditions
-55to150 °C
-55to150 °C
0.25 °C/W DCoperation
0.20 °C/W Mountingsurface,smoothandgreased
5(0.18) g(oz.)
1.2(10) N*m
2.4(20) (Ibf-in)
PowIRtabTM
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