DRAM. TC511002Z-85 Datasheet

TC511002Z-85 DRAM. Datasheet pdf. Equivalent

Part TC511002Z-85
Description DRAM
Feature TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS TC511002P/J/Z-85,.
Manufacture Toshiba
Datasheet
Download TC511002Z-85 Datasheet




TC511002Z-85
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 1 BIT DYNAMIC RAM
SILICON GATE CMOS
TC511002P/J/Z-85, TC511002P/J/Z-l0
TC511002P/J/Z-12
DESCRIPTION
The TC5ll002P/J/Z is the new generation dynamic RA}! organized 1,048,576 words by 1
bit. The TC5ll002P/J/Z utilizes TOSHIBA's CXOS Silicon gate process technology as well as
advanced circuit techniques to provide wide operating margins, both internally and to the
system user. Multiplexed address inputs permit the TC5ll002P/J/Z to be packaged in a
standard 18 pin plastic DIP,.26/20 pin plastic SOJ and 20/19 pin plastic ZIP. The package
size provides system bit densities and is compatible with ~videly available automated test-
ing and insertion equipment. System oriented features include single power supply of
5V±10% tolerance, direct interfacing capability with high performance logic families such
as Schottky TTL. "Test Mode" function is implemented from Revision C.
FEATURES
• 1,048,576 words by 1 bit organization
• Fast access time and cycle time
TC5ll002P/J/Z-85-l0-l2
tp~c RAS Access Time
85ns lOOns l20ns
tM
Column Address
Access Time
45ns 50ns 60ns
tCAC CS Access Time
25ns 25ns 30ns
tRC Cycle Time
l65ns 190ns 220ns
tsc
Static Column
Mode Cycle Time
50ns 55ns 65ns
• Single power supply of 5V±10% with a built-in
VBB generator
PIN CONNECTION CTOP VIEW)
Plastic DIP Plastic SOJ Plastic ZIP
• Low Power
385mt-l MAX. Operating (TC5ll002P / J /Z-85)
330mt-l MAX. Operating (TC5ll002P / J /Z-lO)
275mt-l HAX. Operating (TC5ll002P / J /Z-12)
5 . 5mW ~1A.,{. Standby
• Output unlatched at cycle end allows
t';vo-dimensional chip sel(':!tion
• Common I/O capability
• Read-Modify-Hrite, CS before p~s refresh,
RAS-only refresh, Hidden refresh, Static
Column Mode and Test ~~de capability.
• All inputs and output TTL compatible
• 512 refresh cycles/8ms
• Package
Plastic DIP: TC5ll002P
Plastic SOJ: TC5ll002J
Plastic-ZIP: TC5ll002Z
Vss
DIN
DOUT WRITE
"C'S' RAS
A9
TF
N.C.
AO A8
A7 AO
A6 A1
A2
A5 A3
A4. VCC
PIN r'IM~ES
AO "'A9
RAS
DIN
DOUT
CS
WRITE
VCC
VSS
TF
N.C.
Address Inputs
Row Address Strobe
Data In
Data Out
Chip Select Input
Read/Write Input
Power (+5V)
Ground
Test Function
No Connection
Vss
DOUT
TI"S'
N.C.
A9
A8
A7
A6
A5
A4.
BLOCK 0IAGRn.r·1
AO
A1
A2
A3
A4-
A5
AS
A7
A8
A9
-A-125-



TC511002Z-85
TC511002P/J/Z-85, TC511002P/J/Z-l0
TC511002P/J/Z-12
ABSOLUTE MAXIMUM RATINGS
ITEM
Inpu t Vol ta~e
Test Function IOnput Voltage
Output Voltage
Power Supply Voltage
Operating Temperature
Storage Temperature
Soldering Temperature • Time
Power Dissipation
Short Circuit Output Current
SYMBOL
VIN
VIN(TF)
VOUT
VCC
TOPR
TSTG
TSOLDER
.PD
lOUT
RATING
-1 'V 7
-1 'V 10.5
-1 'V 7
-1 'V 7
o 'V 70
-55 'V 150
260 • 10
600
50
UNITS
V
V
V
V
GlC
°c
°c • sec
mt.;
rnA
NOTES
1
1
1
1
1
1
1
1
1
RECOMMENDED DC OPERATING CONDITIONS (Ta=O 'V 70°C)
SYMBOL
VCC
VIH
VIL
VIH(TF)
PARAMETER
Supply Voltage
Input High Vo1tag~_
Input Low Voltage
Test Enable Inout liigh Voltage
MIN.
4.5
2.4
-1.0
VCC+4.5
TYP.
5-.0
--
MAX.
5.5
6.5
0.8
10.5
UNIT
V
V
V
V
NOTES
2
2
2
2
DC ELECTRICAL CHARACTERISTICS (Vcc=5±10%, Ta=0'V70°C)
SYMBOL
PARANETER
OPERATING CURRENT
ICCI Average Power Supply Operating Current
(RAS, CS, Address Cycling: tRC=tRC MIN. )
'ICSllO 0 2P/J/3-S 5
TCS1l0 0 2E"J/Z-lO
TCSllO 0 2E"J"/Z-12
MIN • MAX.
- 70
- 60
- 50
UNITS ;{OTES
rnA
rnA 3,4
rnA
ICC2
ICC3
ICC4
STANDBY CURRENT
Power Supply Standby Current
(RAS=CS=VIH)
RAS ONLY REFRESH CURRENT
TCSllO 0 2E/J/3-s 5
Average Power Supply Current, RAS Only Mode
TCSllOO2B/J/Z-lO
(RAS Cycling, CS=VIH: tRC=tRC, MIN.)
TCSllO 0 2P/J/3-12
STATIC COLUMN MODE CURRENT
TCSllOO 2P/J/Z-8S
Average Power Supply Current, Static Column
TCSllOO2E/J/Z-lO
Mode (RAS=CS=VIL, Address Cycling: tSC=tsc MIN.) TCSllOO2E/J/Z-12
-
-
-
--
-
-
2 rnA
70 rnA
60 rnA
50 rnA
50 rnA
40 rnA
30 rnA
3
3,4
STANDBY CURRENT
ICC5 Power Supply Standby Current
(RAS=CS=VCC-0.2V)
CS BEFORE RAS REFRESH CURRENT
ICC6 Average Power Supply Current, CS Before
RAS }fode (RAS, CS Cycling: tRC=tRC MIN.)
-
'ICSll 0 0 2P/'J>-Z-85
TCSll 0 0 2B/.:"/Z-10
'ICSllO 0 2E- J/2-12
-
-
-
1 rnA
70 rnA
60 rnA
50 rnA
3
INPUT LEAKAGE CURRENT (any input except TF)
II (1) Input Leakage Current, any input (OV~VIH~6.5V,
All Other Pins Not Under Test = OV)
-10 10 ).lA
INPUT LEAKAGE CURRENT (only TF)
rITF(L) (OVsVIN(Trl~0.8V, All Other Pins Not Under Test=OV)
-10 10 llA
IO(L)
ITF
OUTPUT LEAKAGE CURRENT
(DOUT is disabled. OV~VOUT~ +5. SV)
TEST FUNCTION INPUT CURRENT
(VCc+4.5V;; VIN(TF) ;; 10.5V)
-10 10 llA
- I rnA
VOH
OL"TPUT LEVEL
Output "Hit Level Voltage (IOUT=-SrnA)
2.4 - V
VOL
OUTPUT LEVEL
Output "L" Level Voltage (IOUT=4.2mA)
---...--,-~
...
- 0.4 V
- A-126-







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)