DRAM MODULE. THM91000L-10 Datasheet

THM91000L-10 MODULE. Datasheet pdf. Equivalent

Part THM91000L-10
Description DRAM MODULE
Feature TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 9 BIT DYNAMIC RAM MODULE THM91 000S/L-1 0/12 jOESCRI.
Manufacture Toshiba
Datasheet
Download THM91000L-10 Datasheet




THM91000L-10
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 9 BIT
DYNAMIC RAM MODULE
THM91 000S/L-1 0/12
jOESCRI PTION I
The THH9l000S/L is ~ 1,048,576 words by 9 bits dynamic RAM module \vhich assembled
9 pes of TC511000J on the printed circuit board.
The Tru~lOOOS/L is optimized for application to the systems which are required
high density and large capacity such as main memory of the computers and an i~age memory
systems, and to the others which are requested compact size.
jFEATURES]
• 1,048,576 words by 9 bits organization
• Fast access time
__tRAC
tAA···
RAS Access. Tim.e._-
Column Address Access
Time
tCAC CAS Access Time
tRC Cycle Time
tpc Fast Page Node Cycle Time
TH:-19l000S/L-10
lOOns
50ns
35ns
190ns
55ns
THH<11000S/L-12
120ns
_. 60ns
45ns
220ns
70ns
• Single pmver supply of 5V+10%
• Lm., pmver
2, 970 m~~ NAX. Operating (':'HH91000S/L-10)
2,475 mH NAX. Operating (THH91000S/L-12)
49.5 m~·J HAX. Standby
• CAS before RAS refresh, RAS only refresh, Hidden refresh, and Fast Page Hode
capability.
• All inputs and outputs TTL compatible
• 512 refresh cyc1es/8ms
IPIN CONNECTION!
(TOP VIEU)
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IPIN NAt:1ES!
AO '" 9 Address Inputs
DQO '" 7 Data Input/Outputs
D8 Data Input
Q8 Data Output
CAS Column Address Strobe
RAS Row Address Strobe
VI Read/Hrite Input
CAS8 Column Address Strobe
VCC Pmver (+5V)
VSS Ground
N.C. No Connection
- A-191 -



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