DRAM MODULE
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 9 BIT DYNAMIC RAM MODULE
THM91 000S/L-1 0/12
jOESCRI PTION I
The THH9l00...
Description
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 9 BIT DYNAMIC RAM MODULE
THM91 000S/L-1 0/12
jOESCRI PTION I
The THH9l000S/L is ~ 1,048,576 words by 9 bits dynamic RAM module \vhich assembled 9 pes of TC511000J on the printed circuit board.
The Tru~lOOOS/L is optimized for application to the systems which are required high density and large capacity such as main memory of the computers and an i~age memory systems, and to the others which are requested compact size.
jFEATURES]
1,048,576 words by 9 bits organization Fast access time
__tRAC
tAA···
RAS Access. Tim.e._Column Address Access
Time
tCAC CAS Access Time
tRC Cycle Time
tpc Fast Page Node Cycle Time
TH:-19l000S/L-10 lOOns 50ns 35ns 190ns 55ns
THH<11000S/L-12 120ns
_. 60ns 45ns
220ns 70ns
Single pmver supply of 5V+10% Lm., pmver
2, 970 m~~ NAX. Operating (':'HH91000S/L-10)
2,475 mH NAX. Operating (THH91000S/L-12) 49.5 m~·J HAX. Standby
CAS before RAS refresh, RAS only refresh, Hidden refresh, and F...
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