Static RAM. TMM2015BP-15 Datasheet

TMM2015BP-15 RAM. Datasheet pdf. Equivalent

Part TMM2015BP-15
Description Static RAM
Feature TOSHIBA MOS MEMORY PRODUCTS 2,048 WORD X 8 BIT STATIC RAM TMM2015BP-90, TMM2015BP-12 SILICON MONOLIT.
Manufacture Toshiba
Datasheet
Download TMM2015BP-15 Datasheet




TMM2015BP-15
TOSHIBA MOS MEMORY PRODUCTS
2,048 WORD X 8 BIT STATIC RAM TMM2015BP-90, TMM2015BP-12
SILICON MONOLITHIC
TMM2015BP-10, TMM2015BP-15N-CHANNEL SILICON GATE MOS PROCESS
DESCRIPTION
The TMM2015BP is a 16, 384 bits high speed
and low power static random access memory orga-
nized as 2, 048 words by 8 bits and operates from a
single 5V supply. Toshiba's high performance device
technology provides both high speed and low power
features with a maximum access time of 90ns/
100ns/120ns/150ns and maximum operating cur-
rent of 50mA. When CS is a logical high, the device
is placed In a low power standby mode in which
maximum standby current is 5mA. Thus the
TMM201 nBP IS most sUitable for use In microcom-
puter oenpheral memory where the low power
applications are required. The TMM201 5BP IS fa-
bricated with Ion Implanted N channel silicon gate
MOS technology for high performance and high
reliability
FEATURES
• Access Time and Current
Part
~Number
TMM20l5BP-90
TMM20l5BP-l0
TMM20l5BP-12
TMM20l5BP-15
Access
Time
(Max.)
90ns
lOOns
l20ns
l50ns
Operating
Current
(Max.)
50mA
50mA
50mA
50mA
Standby
Current
(Max.)
5mA
5mA
5mA
5mA
• High Density Assembly Capability
0.3 inch width package (24pin plastic DIP)
• Single 5V power Supply
• Fully Static Operation
• Power Down Feature: CS
• Output Buffer Control: OE
o Three State Outputs
• All Inputs and Outputs: Directly TIL Compatible
• Inputs Protected: All Inputs have protection
against static charge.
PIN CONNENCTION
A7
A6
A5
A4
A3
A2
Ai
AO
1/01
1/02
1/03
OND
Vee
A8
A9
WE
OE
AIO
cs
1/08
1/07
1/06
1/05
1/04
PIN NAMES
Ao-A3
A4-AlO
CS
WE
1/0,-1/08
OE
Vee
GND
Column Address Inputs
Row Address Inputs
Chip Select Input
Write Enable Input
Data Input/Output
Output Enable Input
Power (5V)
Ground
BLOCK DIAGRAM
MEMORY
CELL ARRAY
( 128X16X8)
---<> OND
1/01O---~~~==~~--~~---'==~~~---,
1/02 o-----+l-~-I-',
I /0 3 o---.H-~>+.J
! / 0 4 n--_.t++--r>~
1 / 0 5 o - ............I-I-H-~+-J111
1/06 o-~I-I-H--f'>.+-
1/0 7 o--.++++H-n~........J
I /08 D--'I~I-I-H--D--I--
e sU~-_
CSO--~........~
---
-
8-3
WE
OEO------l---l1



TMM2015BP-15
TMM2015BP-90, TMM2015BP-12
TMM2015BP-10, TMM2015BP-15
SYMBOL
ITEM
Vee Power Supply Voltage
VIN. Your
Input/Output Voltage
TOPR Operating Temperature
TsrG Storage Terperature
TsoLoER
Soldering Temperature· Time
Po Power Dissipation (Ta = 70'C)
* -3.0V at Pulse width 50ns
F'D:~'c:<"R'EcoMMiNDE<Do'PERATiN(rCOND'iTioNs
L",."." . "".""", 'w,,~.'''' ,'w· .•.. ",.., •• ,,, ."0",,,·, .., ',,,w""""""',....i .." ....... " ...,......., .•.., .•.•...••, .•.."."••••., :....,.... , .." •..•• ,.. " •••.•. ,,,.,,,.............. w,
SYMBOL
PARAMETER
VIH Input High Vovtage
VIL Input Low Voltage
Vee Power Supply Voltage
* * -3.0V at Pulse width 50ns
(Ta =0- 70'C)
MIN.
2.0
-0.5**
4.5
[":'''O:::C·:·.''CHARACTERisffcsL,.. "....,..,.,.".·,.....".,'w.:" .... ,,,,,.,..•.. ,...... ,.. ,."'....."'..... ,...,."".,,,,.,
(Ta=0-70·C. Vee=5V±10%)
SYMBOL
PARAMETER
CONDITIONS
IlL Input Leakage Current
VOH Output High Voltage
VOL Output Low Voltage
ILO Output Leakage Current
VIN=OV-5.5V
lour= -1 .0mA
lour=4.0mA
CS=VIH or
WE=VIL or OE=VIH.
Vour=OV-5.5V
ISBP Peak Power-on Current
ISB Standby Current
Icc Operating Current
CS=Vcc. lour=OmA
CS=VIH • lour=OmA
CS=VIL. lour=OmA
RATING
-0.5-7.0
-0.5*-7.0
0-70
-55-150
260·10
0.7
UNIT
V
V
'C
'C
'C'sec
W
TYP.
-
-
5.0
MAX.
Vee+ 1.0
0.8
5.5
UNIT
V
V
V
MIN
-10
2.4
-
TYP
-
-
-
MAX
10
-
0.4
UNIT
J.lA
V
V
-10 -
10 J.lA
- - 10 mA
--
5 mA
- - 50 mA
~CAPACITANCE.;.'" (Ta=25'C. f= 1MHz)
h~,,·,,· ,"".,'.' ~:.: ~,~.v:. '''''<'. ~'h .,,,;, ''';h~<'.~<~~~,.".~,.. ,~.: :":v:.~""';'M'->'<~' 0.;;",;::';' ," 1;:
SYMBOL
PARAMETER
CONDITIONS
CIN Input Capacitance
VIN=OV
Cour
Output Capacitance
Vour=OV
* * * Note: This paramenter is periodically sampled and is not 100% tested.
MAX.
5
10
UNIT
pF
pF
- 8-4 -







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