Static RAM. TMM2063P-15 Datasheet

TMM2063P-15 RAM. Datasheet pdf. Equivalent

Part TMM2063P-15
Description Static RAM
Feature TOSHIBA MOS MEMORY PRODUCTS 8,192 WORD X 8 BIT STATIC RAM TMM2063P-10, TMM2063P-12 N·CHANNEL SILIC.
Manufacture Toshiba
Datasheet
Download TMM2063P-15 Datasheet



TMM2063P-15
TOSHIBA MOS MEMORY PRODUCTS
8,192 WORD X 8 BIT STATIC RAM TMM2063P-10, TMM2063P-12
N·CHANNEL SILICON GATE MOS
TMM2063P-15
DESCRIPTION~
The TMM2063P is a 65,536 bits high speed and
low power static random access memory organized
as 8,192 words by 8 bits and operates from a single
5V supply. Toshiba's high performance device
technology provides both high speed and low power
features with a maximum access time of 100ns/
120ns/150ns and maximum operating current of
80mA. When CS, is a logical high or CS2 is a logical
low, the device is placed in a low power standby
mode in which maximum standby current is 10mA.
Thus the TMM2063P is most suitable for use in
microcomputer peripheral memory where the low
power applications are required. moreover, suitable
for use in high density ~ssembly as 0.3 inch width
package is use for. The TMM2063P is fabricated
with ion implanted N channel silicon gate MOS
technology for high performance and high reliability.
FEATURES«
• Access Time and Current
Part
~Number
TMM2063p·1O
TMM2063P-12
TMM2063P-15
Access
Time
(Max.)
lOOns
l20ns
l50ns
Operating
Current
(Max.)
80mA
80mA
80mA
Standby
Current
(Max.)
lOrnA
lOrnA
lOrnA
• Single 5V Power Supply
• Fully Static Operation
o Power Down Feature: CS" CS2
o Output Buffer Control: OE
o Three State Outputs
• All Inputs and Outputs: Directly TIL Compatible
• Inputs Protected: All inputs have protection
against static charge
• High Density Assembly Capability: 0.3 inch
width package (28 pin plastic DIP)
PIN CONNECTION
.. BI..()Ci<6iAGRAM
N.C. 1
A12 2
A7 3
Ati 4
A5 :)
.'\4 0
A3 7
A2
Al
lvJ
1/01
1/02
8
~
10
11
1<:
1/03 13
UND 14
PIN NAMES
28 Vee
27 WI!:
26 eS2
25 At3
24 A~
23 All
22 OE
21 AI0
20 eSl
1~ 1/08
18 1/07
17 1/00
16 1/05
15 1/04
A5 o--t--a:::::::r::::J
A 6 o-+--a::::::I:=:.:J
A12 o--t--a::::::I:=:.:J
llEUORY eELL
ARRAY
256)(32)(8
(65536)
---0 Vee
-OOND
SYMBOL
Ao-A4
A5-A,2
CS,. CS2
WE
I/O,-I/Oa
OE
Vee
GND
N. C.
NAME
Column Address Inputs
Row Address Inputs
Chip Select Inputs
Write Enable Input
Data Input/Output
Output Enable Input
Power (+5V)
Ground
Nu Connection
I/01 0--+---1
V08W
eS2
CsT
8-35 -
~---CB



TMM2063P-15
TMM2063P-10, TMM2063P-12
TMM2063P-15
MAXIMUM RATINGS
SYMBOL
ITEM
Vee Power Supply Voltage
VIN. VOUT
Input/Output Voltage
TOPR
Operating Temperature
TSTG Storage Temperature
TSOLOER
Soldering Temperature' Time
Po Power Dissipation (Ta=70'C)
* - 3. OV at Pulse width 50ns
D. C'. RECOMMENDED OPERATING CONDITIONS
(Ta=0-70'C)
SYMBOL
PARAMETER
VIH Input High Voltage
VIL Input Low Voltage
Vee Supply Voltage
* -tc 3. OV at Pulse width 50ns
MIN.
2.0
-0.5··
4.5
RATING
-0.5-7.0
-0.5·-7.0
0-70
-55-150
260·10
0.8
TYP.
-
-
5.0
MAX.
Vee+ 1.0
0.8
5.5
UNIT
V
V
'C
'C
'C·sec
W
UNIT
V
V
V
D. C. CHARACTERISTICS , (Ta=0-70'C. Vee=5V±10%)
SYMBOL
IlL
VOH
VOL
PARAMETER
Input Leakage Current
Output High Voltage
Output Low Voltage
ILO Output Leakage Current
ISBP Peak Power-on Current
ISB Standby Current
Icc Operating Current
CONDITIONS
VIN=OV-5.5V
louT= -1 .0mA
louT=2. 1mA
CS1=VIH or CS2 =VIL or
WE=VIL or OE=VIH.
VouT=OV-5.5V
CSI =Vee. CS2=OV
louT=OmA
CSI =VIH or CS2 =VIL.
louT=OmA
CSI =VIL. CS2.=VIH.
louT=OmA
MIN.
-10
2.4
-
TYP.
-
-
-
MAX.
10
-
0.4
UNIT
J.lA
V
V
-10 -
10 J.lA
- - 20 mA
- - 10 mA
- - 80 mA
CAPACITANCE"· (Ta=25'C. f=1.0MHz)
SYMBOL
PARAMETER
CONDITIONS
CIN Input Capacitance
VIN=OV
COUT
Output Capacitance
VIN=OV
* * * Note: This parameter is periodically sampled and is not 100% tested.
MAX.
5
10
UNIT
pF
pF
- 8-36 -







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