STATIC RAM. TC55257AF-12 Datasheet

TC55257AF-12 RAM. Datasheet pdf. Equivalent

Part TC55257AF-12
Description STATIC RAM
Feature 1fOSH~lBA MOS MEMORY PRODUCT 32,768 WORD X 8 BIT CMOS STATIC RAM SILICON GATE CMOS PRELIMINARY TC5.
Manufacture Toshiba Semiconductor
Datasheet
Download TC55257AF-12 Datasheet




TC55257AF-12
1fOSH~lBA MOS MEMORY PRODUCT
32,768 WORD X 8 BIT CMOS STATIC RAM
SILICON GATE CMOS
PRELIMINARY
TC55257AP-l O/APL-l O/AP-12/APL-12
TC55257A~10/AF~10/A~12/AF~12
[QfSCR I PTI ON I
The TC55257AP is 262,144 bit static random access memory organized as 32,768 words
by 8 bits usIng OIOS technology, and operated trom a single 5V supply. Advanced circuit
techniques provide both high speed and low power features with a maximum operating cur-
rent of 5mA/rnIz and minimum cycle time of 100nsi l20ns.
Hhen CE is a logic<ll high, the device is pLlcecl in lmv pm'ler standby mode i.n T Ih Jrh
standby current is 2~A typically. Tile TC55257AP h<lS two control inputs. Chip enable (CE)
<lllow for device selection and data ret0ntion control, <lnd an output enable input (UE)
provides fast r.1e::iory access. Thus the TC55257AP Is suitable for use in various mi~roproc­
essor application systems where high speed, low power, and battery back up are required.
TC55257AP is offered in both a standard dual-In-line 28 pIn plastic pac'kage (0.6
inch width) and small-out-line plastic flat packn~e.
IFEATURES!
• Low Power Dissipation
27. 5ml~/t'f1!z C·[ax.) Operating
• Access Time
-
• Standby Current
---------.100pA(Hax.): TC55257APL-lO/APL-l2 Access TimeU1A..'{.)
TC55257AP-IO/APL-IO
AF-IO/AFL-I0
lOOns
TC55257 AP-12/APL-12
AF-12/AFL-12
l20ns
/AFL-10/AFL-12 CE Access Time(UAX.)
lOOns
l20ns
lr.1A(Hax.): TC55257AP-lO/AP-12 Output Enable Time
/AF-10/AF-12
(~!AX. )
SOns
60ns
• 5V Single Power Supply
Po~ver Dmm Feature: CE
• Data Retention Supply Voltage:
• Directly TTL Compatible: All Inputs and Outputs
Plastic DIP and Plastic FP Package
2.0'VS.5V
IBLOCK DIAGRAr"I!
1PIN CONNECTION! (TOP VIEH)
A14
.\12
A'7
A6
.<\5
A4,
A3
.'\2
Al
AO
1/01
1/02
1/03
GND
VDD
l:',/'s
A13
A8
A9
Aosll
Ala
cs
VA '3
1/0'7
1/06
1/05
1/04
A5
A6
)..'7
A8
.1\9
All
A12
A13
A14
I/O1o-.---t
r..--------...,."
MEMORY CELL
ARRAY
512X32X16
(262144)
16
--oVDD
~GND
IPI N tIAt'1ES I
AO 'V A14
R/W
OE
CE
1/01 'V 1/08
VDD
GND
Address Inputs
Read/Write Control Input
Output Enable Input
Chip Enable Input
Data Input/Output
Power (+5V)
Ground
CE
8-99 -



TC55257AF-12
TC55257AP-l 0/APL-10/AP-12/APL-12
TC55257AF-l0/AFL-l0/AF-12/AFL-12
~ERATION r,10DEI
OPERATIO~ ~!OOE
Read
('irite
Output Deselect
Standby
"') H or L
CE OE R/U 1/01 'V 1/08 PO\vER
L LH
DOUT
1000
L L,,;'~
DI~ 1000
L
II
II
lIigh-Z
TOOO
II
':i':
.'.
fligh-Z
IOOS
SYNBOL
ITG!
VOO Pmver Supply Voltage
VIN Input V.oltage
VI/o
Input and Output Voltage
Po Power Dissipation
Tsolder
Tstrg
Soldering Temperature
Storage Temperature
Topr
Operating Temperature
* ....... -3.0V at pulse width SOns
ID.C. RECOMMENDED OPERATING CONDITIONS!
SYHBOL
PARAHETER
VOD Power Supply Voltage
VIR Input High Voltage
VIL Input Low Voltage
VOR Oata Retention Supply Voltage
RATING
-0.3'\,7.0
-0 • 3:', 'V 7. 0
-0.5 'V VOO+O. 5
1.0
260 • 10
-55 'V 150
O'V 70
UNIT
V
V
V
Iv
°c • sec
°c
°c
HIN.
4.5
2.2
-0.3
2.0
TYP. HAX.
5.0 5.5
- VOO+O·3
- 0.8
- 5.5
UNIT
V
V
V
V
- 8-100-







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