Phase Bridge. VS-300MT180C Datasheet

VS-300MT180C Bridge. Datasheet pdf. Equivalent

Part VS-300MT180C
Description Three Phase Bridge
Feature www.vishay.com VS-300MT...C Series Vishay Semiconductors Three Phase Bridge, 300 A (Power Modules).
Manufacture Vishay
Datasheet
Download VS-300MT180C Datasheet




VS-300MT180C
www.vishay.com
VS-300MT...C Series
Vishay Semiconductors
Three Phase Bridge, 300 A
(Power Modules)
MTC
PRODUCT SUMMARY
IO
VRRM
Package
Circuit
300 A at 100 °C
1600 V to 1800 V
MTC
Three phase bridge
FEATURES
• Blocking voltage up to 1800 V
• High surge capability
• High thermal conductivity package, electrically
insulated case
• Excellent power volume ratio
• 3600 VRMS isolating voltage
• UL pending
• Designed for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
A range of extremely compact, encapsulated three phase
bridge rectifiers offering efficient and reliable operation.
They are intended for use in general purpose and heavy duty
applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
IO (1)
IFSM
TC
50 Hz
60 Hz
258
110
2400
2512
50 Hz
I2t
60 Hz
28 795
26 285
I2t 287 955
VRRM
TStg
TJ
Range
Range
Range
1600 to 1800
-40 to +125
-40 to +150
Note
(1) Maximum output current must be limited to 250 A to do not exceed the maximum temperature of terminals
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VS-300MT...C
160
180
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
1600
1800
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1700
1900
UNITS
A
°C
A
A2s
A2s
V
°C
°C
IRRM MAXIMUM
AT TJ = MAXIMUM
mA
12
Revision: 30-Jun-16
1 Document Number: 95682
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



VS-300MT180C
www.vishay.com
VS-300MT...C Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum DC output current
at case temperature
IO 120° rect. conduction angle
Maximum peak, one-cycle
forward, non-repetitive surge
current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of
threshold voltage
High level value of
threshold voltage
Low level value of forward slope
resistance
High level of forward slope
resistance
I2t
VFT(TO)1
VFT(TO)2
rf1
rf2
Maximum forward voltage drop
VFM
RMS isolation voltage
VISOL
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Initial
TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x x IF(AV) < I < x IF(AV)),
TJ maximum
(I > x IF(AV)), TJ maximum
16.7 % x x IF(AV) < I < x IF(AV)),
TJ maximum
(I > x IF(AV)), TJ maximum
Ipk = 240 A, TJ = 25 °C, per junction
Ipk = 300 A, TJ = 25 °C, per junction
TJ = 25 °C, all terminal shorted
f = 50 Hz, t = 1 s
VALUES
300
100
2400
2512
2018
2113
28 795
26 285
20 360
18 590
287 955
0.79
0.96
3.36
3.22
1.54
1.7
3600
UNITS
A
°C
A
A2s
A2s
V
m
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
Maximum storage temperature
TJ
TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation per module
DC operation per junction
Typical thermal resistance,
case to heat sink
RthCS
Per module
Mounting surface smooth, flat, and greased
Mounting
torque ± 15 %
to heat sink
to terminal
Approximate weight
A mounting compound is recommended and the torque should
be rechecked after a period of 3 hours to allow for the spread of
the compound. Lubricated threads.
VALUES
-40 to +150
-40 to +125
0.038
0.23
0.03
5
5
235
UNITS
°C
°C/W
Nm
g
R CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION
180°
120°
90°
60°
30°
RECTANGULAR WAVE CONDUCTION
180°
120°
90°
60°
30°
VS-300MT...C Series 0.044 0.050 0.061 0.087 0.143 0.029 0.050 0.066 0.091 0.145
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
°C/W
Revision: 30-Jun-16
2 Document Number: 95682
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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