STC403L Silicon Transistor Datasheet

STC403L Datasheet, PDF, Equivalent


Part Number

STC403L

Description

NPN Silicon Transistor

Manufacture

KODENSHI

Total Page 6 Pages
Datasheet
Download STC403L Datasheet


STC403L
Applications
Power amplifier application
High current switching application.
Features
Power Transistor General Purpose application
Low saturation voltage : VCE(SAT)=0.4V Typ.
High Voltage : VCEO=60V Min.
Ordering Information
Type NO.
STC403L
Marking
STC403
STC403L
NPN Silicon Transistor
PIN Connection
TO -92L
1: Emitter 2 :Collector 3: Base
Package Code
TO-92L
Absolute maximum ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300
Characteristic
Thermal resistance
Symbol
VCBO
VCEO
VEBO
IC
*ICP
PC
Tj
Tstg
Symbol
Rth(J-a)
Rating
80
60
5
3
6
1
150
-55~150
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Typ.
-
Max
125.0
Unit
/W
KSD-T0D004-003
1

STC403L
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage BVCEO IC=50mA, IB=0
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE * VCE=5V, IC=0.5A
Base-Emitter on voltage
VBE(ON) VCE=5V, IC=0.5A
Collector-Emitter saturation voltage VCE(sat) IC=2A, IB=0.2A
Transition frequency
fT VCB=5V, IC=0.5A
Collector output capacitance
Cob VCB=10V, IE=0, f=1MHz
Switching
Time
Turn-on Time
Storage Time
Fall Time
* hFE rank : 200~400 Only
ton
tstg
tf
STC403L
Min. Typ. Max. Unit
60 - - V
- - 50 μA
- - 50 μA
200 - 400 -
- 0.7 1
V
- 0.4 1
V
- 30
- MHz
- 35 - pF
- 0.65 -
- 1.3
-
- 0.65 -
KSD-T0D004-003
2


Features Applications • Power amplifier applica tion • High current switching applica tion. Features • Power Transistor Gen eral Purpose application • Low satura tion voltage : VCE(SAT)=0.4V Typ. • H igh Voltage : VCEO=60V Min. Ordering I nformation Type NO. STC403L Marking ST C403 STC403L NPN Silicon Transistor PI N Connection TO -92L 1: Emitter 2 :Coll ector 3: Base Package Code TO-92L Abso lute maximum ratings Characteristic Col lector-base voltage Collector-emitter v oltage Emitter-base voltage Collector c urrent Collector power dissipation Junc tion temperature Storage temperature * : Single pulse, tp= 300 ㎲ Characteris tic Thermal resistance Symbol VCBO VCE O VEBO IC *ICP PC Tj Tstg Symbol Rth(J- a) Rating 80 60 5 3 6 1 150 -55~150 U nit V V V A(DC) A(Pulse) W °C °C Typ . - Max 125.0 Unit ℃/W KSD-T0D004- 003 1 Electrical Characteristics Cha racteristic Symbol Test Condition Co llector-Emitter breakdown voltage BVCEO IC=50mA, IB=0 Collector cut-off current ICBO VCB=60V, IE=0 .
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