Semiconductor
Description
• RF amplifier
Features
• High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1m...
Semiconductor
Description
RF amplifier
Features
High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA]
Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0]
Low base time constant and high gain Excellent noise response
Ordering Information
Type NO.
Marking
2SC5345S
Outline Dimensions
Z : hFE rank
2.4±0.1 1.30±0.1
1.90 Typ.
1 3
2
0.45~0.60
2.9±0.1
2SC5345S
NPN Silicon
Transistor
Package Code SOT-23
unit : mm
0.4 Typ.
-0.03 +0.05
1.12 Max. 0.38
0~0.1
0.2 Min.
PIN Connections 1. Base 2. Emitter 3. Collector
0.124
KST-2031-000
1
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC PC Tj Tstg
Ratings
30 20 4 20 150 150 -55~150
2SC5345S
Ta=25°C
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown vo...
