DN200

Semiconductor Features Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.3V Typ. @IC /IB=1A/50mA) Suitable for low voltage large current drivers Complementary pair with DP200 Switching Application Ordering Information Type NO. DN200 Marking DN200 Outline Dimensions DN200 NPN Silicon Transistor Package Code TO-92 unit : mm KST-9085-000 PIN Connections 1. Emitter 2. Collector 3. Base 1 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj T stg Ratings 15 12 5 2 625 150 -55~150 DN200 (Ta=25° C) Unit V V V A mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter satur...